Regulating absorption loss and carrier injection efficiency in ultraviolet laser diodes by changing waveguide layer structure

Yang, Jing; Zhao, Degang; Liu, Z.S.; Liang, Feng; Chen, P.; Wang, B.B.; Zhang, Y.H.; Zhang, Z.Z.

doi:10.1016/j.optlastec.2022.108574

Cited by 4 publications

(2 citation statements)

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“…We also study the thermal characteristics of two UV LDs with different WG structures LD A and LD B under pulsed and CW operation [17] , as shown in Fig. 9.…”

Section: Suppression Of Thermal Effect In Uv Ldsmentioning

confidence: 99%

“…In China, our group realized UVA LDs with a lasing wavelength of 381.9 nm in 2016 [14] . The lasing wavelength was further reduced to 357.9 nm in 2022 [15,16] and the RT CW output power of UVA LD increased to 3.8 W with a lasing wavelength of 386.5 nm [17,18] . Although UV LDs have been investigated for many years, their performance is much lower than those of GaN based violet, blue, and green LDs.…”

Section: Introductionmentioning

confidence: 99%

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GaN based ultraviolet laser diodes

Yang,

Zhao,

Liu

et al. 2024

J. Semicond.

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In the past few years, many groups have focused on the research and development of GaN-based ultraviolet laser diodes (UV LDs). Great progresses have been achieved even though many challenges exist. In this article, we analyze the challenges of developing GaN-based ultraviolet laser diodes, and the approaches to improve the performance of ultraviolet laser diode are reviewed. With these techniques, room temperature (RT) pulsed oscillation of AlGaN UVA (ultraviolet A) LD has been realized, with a lasing wavelength of 357.9 nm. Combining with the suppression of thermal effect, the high output power of 3.8 W UV LD with a lasing wavelength of 386.5 nm was also fabricated.

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“…We also study the thermal characteristics of two UV LDs with different WG structures LD A and LD B under pulsed and CW operation [17] , as shown in Fig. 9.…”

Section: Suppression Of Thermal Effect In Uv Ldsmentioning

confidence: 99%