2009
DOI: 10.1149/1.3237005
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Regularization Algorithm for DOS Spectrum Deconvolution From C(V) and Q(V) Dependencies of Si Nanowire-Based MOS Structure

Abstract: Based on Tikhonov's regularization approach, we developed regularization algorithm (RA) for deconvolution electron spectrum N(E) from data of capacitance - gate voltage [C(V)] and charge-gate voltage [Q(V)] characteristics of nanowire-based FETs. Our RA solves one-dimensional ill-posed Fredholm integral equation(s) of the second kind employing analytical properties of Fourier integral transform. The N(E) functions for CB states deconvoluted from C(V) characteristics exhibit good quantitative agreement with DOS… Show more

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Cited by 6 publications
(12 citation statements)
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“…The experimental work done previously does however suggest that treating the dielectric constant (ω) of the diamond test mass as real and independent of both frequency and temperature in the limit when T ∼ O(1) K is a reasonably good assumption; see Refs. [51][52][53]. Furthermore, the temperature correction to the Casimir force can also be neglected at such low temperature regions, see the analysis in Ref.…”
Section: B Casimir Screeningmentioning
confidence: 99%
“…The experimental work done previously does however suggest that treating the dielectric constant (ω) of the diamond test mass as real and independent of both frequency and temperature in the limit when T ∼ O(1) K is a reasonably good assumption; see Refs. [51][52][53]. Furthermore, the temperature correction to the Casimir force can also be neglected at such low temperature regions, see the analysis in Ref.…”
Section: B Casimir Screeningmentioning
confidence: 99%
“…[2] with β = 1, f is the modified (due to electron collisions) statistical function, τ is the relaxation time, ∇ k and ∇ r are gradient operators in the momentum and spatial sub-spaces of the whole phase space. As for the 'supplementary' g function (which appears to reflect the collisions contribution), we can use a 'linearized' approximation, proposed in Ref.…”
Section: Boltzmann Transport Equation For C(v) Dependencies Of Sinw-bmentioning
confidence: 99%
“…4(a), (b) compare the standard FD distribution function (represented by Eq. [2] at V = 0) with the modified one (computed in accordance to Eqs. [4, 4a, 4b] for a = 5 nm) at two different temperatures: 300 K and 38 K. As one can see from figures 4(a) and (b), the modified distribution function deviates quite moderately from FD one at T = 300 K, but such deviation becomes severe at T = 38 K. This means that not only NW radius a, but also temperature exhibit strong effect on distribution function and eventual relationship between N(E) and C(V) functions in SiNW-based MOS structure.…”
Section: Boltzmann Transport Equation For C(v) Dependencies Of Sinw-bmentioning
confidence: 99%
“…Distinctive feature of Eqs. [1,2] consist in the fact that both of them treat E and eV quantities in the equivalent fashion, presuming the unity 'scaling factor' between them (i.e. β = 1).…”
Section: Effects Of Temperature and Nw Transverse Size On C(v) And N(...mentioning
confidence: 99%