Regular and chaotic current oscillations in<i>n</i>-type GaAs in transverse and longitudinal magnetic fields

Spangler, John D.; Margull, Ulrich; Prettl, Wilhelm

doi:10.1103/physrevb.45.12137

Cited by 27 publications

(10 citation statements)

References 19 publications

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“…In the course of filament formation and in the regime of filamentary current flow, hysteretic structures in the current-voltage characteristics and self-sustained regular and chaotic oscillations have been observed in various semiconductor materials [5]. Previous investigations on thin epitaxial layers of n-GaAs revealed that an external magnetic field normal to the plane of the semiconductor plays a crucial role in the formation and the stability of a current filament 161. Without a magnetic field or with a field parallcl to the current flow, at the threshold of breakdown a repetitive ignition and extinction of a current filament yields regular relaxation oscillations which proceed with increasing average current into a stable filamentay current flow.…”

Section: Introductionmentioning

confidence: 99%

Magnetoresistance of n-GaAs at filamentary current flow

Proshin

Голубев

Würfl

et al. 1993

Semicond. Sci. Technol.

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Abstract. A large number of sharp structures are observed in the 4.2 K magnetoresistance of n-GaAs biased above impurity breakdown in a regime where current flow is filamentary. Most of the structures cannot be attributed to spectral properties of the semiconductor such as impact excitation of shallow donors or the magnetoimpurity effect. Experimental results give evidence that these structures are caused by a redistribution of the filamentary current flow when one filament border is swept across an imperfection in the material.

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Section: Introductionmentioning

confidence: 99%

Magnetoresistance of n-GaAs at filamentary current flow

Proshin

Голубев

Würfl

et al. 1993

Semicond. Sci. Technol.

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“…Besides destabilizing filamentary current flow [7] magnetic field induced discontinuities and hystereses have been observed. An example is the large hysteresis shown in Fig.…”

Section: Resultsmentioning

confidence: 97%

“…External magnetic fields may substantially change current voltage characteristics [7,10]. Besides destabilizing filamentary current flow [7] magnetic field induced discontinuities and hystereses have been observed.…”

Section: Resultsmentioning

confidence: 99%

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Discontinuities and Hysteresis in the I–V Characteristics of n-GaAs at Low Temperatures

Klimenta

Alshuth

Prettl

et al. 1999

phys. stat. sol. (a)

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We present experimental investigations of current filamentation in n‐GaAs films in the regime of low‐temperature impurity breakdown. Using a laser‐scanning microscope, we were able to reconstruct current filaments in biasing regions of multistability. It is shown that discontinuities and hysteresis frequently observed in current–voltage characteristics are due to the interaction of filaments with material imperfections. In particular filaments remain in energetically unfavourable configurations when squeezed or pinned by defects.

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“…Numerous investigations of magnetic field influence on low-temperature impurity breakdown in pGe and n-GaAs (see, for example, papers [4][5][6]) were concentrated on problems of beginning spontaneous current oscillations under these conditions and their transition to chaos. It is talked, as a rule, about low magnetic fields and slightly doped materials in the form of resistors.…”

Section: Introductionmentioning

confidence: 99%

Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown

Aleinikov¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Effect of magnetic field (up to 14 T) on current-voltage characteristics of silicon n + -p diodes which manifests hysteresis loops related with low-temperature impurity breakdown has been studied. With growth of magnetic field, the hysteresis loops are narrowed and decreased in amplitude and then disappear, but the breakdown continues in a soft form. Planar design of the diode has allowed separating the influence of magnetic field on mobility of the carriers executing impact ionization of the impurities and on the ionization energy itself. Theoretical analysis of the experimental data permitted us to determine the dependence of the ionization energy on the magnetic field. As in other investigated semiconductors, our results demonstrate the dependence of B 1/3 -type. A model capable to explain qualitatively the mechanism of suppression of the hysteresis loops by magnetic field is proposed as well.

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Regular and chaotic current oscillations inn-type GaAs in transverse and longitudinal magnetic fields

Cited by 27 publications

References 19 publications

Magnetoresistance of n-GaAs at filamentary current flow

Magnetoresistance of n-GaAs at filamentary current flow

Discontinuities and Hysteresis in the I–V Characteristics of n-GaAs at Low Temperatures

Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown

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