Regrowth of Ge with different degrees of damage under thermal and athermal treatment

Hooda, Sonu; Satpati, Biswarup; Kumar, Tanuj; Ojha, Sunil; Kanjilal, D.; Kabiraj, D.

doi:10.1039/c5ra20502f

Cited by 6 publications

(5 citation statements)

References 39 publications

(46 reference statements)

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“…Here, I-TS is used to describe the rise in temperature of lattice. The detailed description of two temperature model is given in our previous reports [20][21][22], where the temperature rise, formation of track and diameter of track were calculated in c-Ge and a-Ge. In case of c-Ge, the value of 'g' is low enough such that 100 MeV Ag produce no lattice defects that corroborate the results showing insensitivity of c-Ge towards Se.…”

Section: Discussionmentioning

confidence: 99%

“…Gartner et al [19] reported that outgoing shock waves, resulting from transient heating and expansion of the ion-track core due to SHI irradiation, is the origin of voids. Our group also studied response of pre-damaged Ge under 100 MeV Ag ions irradiation [20,21] to report the growth dynamics and shape evolution of voids [3]. For the sake of completeness, surface modification due to high energy ion irradiation in Ge and role of electronic sputtering on these surface pattern formations was also presented [14,22].…”

Section: Introductionmentioning

confidence: 99%

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Mechanistic details of the formation and growth of nanoscale voids in Ge under extreme conditions within an ion track

Hooda

Avchachov

Khan

et al. 2017

J. Phys. D: Appl. Phys.

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The initial steps of Ge nanovoids formation have been studied. Two step energetic ion irradiation processes was used to fabricate novel and distinct embedded nanovoids within bulk Ge. The formation of voids in amorphous-Ge (a-Ge) and their size, and shape evolution under ultra-fast thermal spike within ion track of swift heavy ion, is meticulously expatiated using experimental and theoretical approaches. The 'bow-tie' shape of void formed in single ion track tends to attain spherical shape as the ion tracks overlap at about 1×10 12 ions cm-2 and the void assumes prolate spheroid shape with major axis along the ion trajectory at sufficiently high ion fluences. Small angle X-ray scattering can provide information about primary stage of void formation hence this technique is applied for monitoring simultaneously their formation and growth dynamics. The results are supported by transmission (XTEM) and scanning (XSEM) electron micrographs. The multi-timescale theoretical approach corroborate the experimental findings and relate the bow-tie shape void formation to density variation as a result of melting and resolidification of Ge within thermal spike generated along ion track plus non-isotropic stresses generated towards the end of the thermal spike.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Mechanistic details of the formation and growth of nanoscale voids in Ge under extreme conditions within an ion track

Hooda

Avchachov

Khan

et al. 2017

J. Phys. D: Appl. Phys.

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“…In the present study, the nanoporosity (if any) beyond the amorphous phases as seen by Impellizzeri et al [24] in thin films is difficult to check with Raman spectra. However, a very recent study [25] shows the formation of voids/porosity in the amorphous phase of the low-energy bombarded Ge wafer and the subsequent repair by thermal and athermal treatments. The nanoporosity in the crystalline structure is characterized by the shifting of sharp Raman peaks towards higher wavelengths [26].…”

Section: Resultsmentioning

confidence: 99%

Medium-energy ion irradiation of Si and Ge wafers: studies of surface nanopatterning and signature of recrystallization in 100 keV Kr⁺bombarded a-Si

Kumar

2016

Semicond. Sci. Technol.

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We report new and exciting experimental results on ion-induced nanopatterning of a-Si and a-Ge surfaces. The crystalline Si (100) and Ge (100) wafers were amorphized and an a/c interface was developed by pre-irradiation with a 50 keV Ar + beam at normal incidence with an ion fluence of 5.0×10 15 ionscm −2 . These amorphized surfaces were post-irradiated with Ar + and Kr + beams at an angle of 60°. The post irradiation was done with ion fluences of 1.0×10 17 ions cm −2 . For each beam, two energies (50 and 200 keV for Ar + , 100 and 250 keV for Kr + ) were chosen to ensure ion stopping in both sides of the a/c interface. Regular nanopatterning (in the form of ripples) is observed on the Ge surface only with the post irradiation of the Kr + beam. The Si surface showed regular nanopatterning with the irradiation of both beams with two energies. For the ion beams crossing the a/c interface, ripples of higher amplitude and longer wavelength were formed. Further, the irradiation with a heavy beam yielded surface ripples of relatively larger amplitudes. The Raman measurements confirm amorphization of the pre-irradiated surfaces. Surprisingly, the post-irradiated Si surface with the 100 keV Kr + beam showed evidence of recrystallization. In the paper we discuss the physics at the interface and explain the experimental findings.

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“…This decrease is found to be 42% of the total damage at oblique incidence of 30°, resulting in recrystallized layer of thickness 32 nm. Surprisingly, complete recrystallization could not be attained upon thermal annealing at 1,073 K. This can be attributed to the agglomeration of isolated point defects into extended defect zones 11,18 , thereby, making difficulty in annealing even at a temperature of 1,073 K.…”

Section: Rbs/c Investigations Of As Amorphized and Recrystallized Si(mentioning

confidence: 99%

“…Besides recovery by annealing treatment, some stress still remains in the recrystallized Si(111) samples. This remnant stress has been signified by shifting of the Raman peak in these recrystallized specimens towards the lower wave numbers in comparison to un-irradiated c-Si, which is stress free 18,[35][36][37][38][39] . The magnitude of this stress has been estimated 39 using the relation:…”

Section: Rbs/c Investigations Of As Amorphized and Recrystallized Si(mentioning

confidence: 99%

Nano-scale depth-varying recrystallization of oblique Ar+ sputtered Si(111) layers

Gupta

Umapathy

Singhal

et al. 2020

Sci Rep

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Silicon, the workhorse of semiconductor industry, is being exploited for various functional applications in numerous fields of nanotechnology. In this paper, we report the fabrication of depth controllable amorphous silicon (a-Si) layers under 80 keV Ar + ion sputtering at off-normal ion incidences of 30°, 40° and 50° and crystallization of these amorphous Si(111) layers under thermal annealing. We find that the irradiated samples were not fully amorphized even for the lowest oblique incidence of 30°. Sputtering at off-normal incidences induces depth controllable surface amorphization in Si(111). Annealing at temperature of 1,073 K is characterized by formation of depth-varying buried amorphous layer due to defect recrystallization and damage recovery. Some remnant tensile stress has been observed for recrystallized samples even for lowest oblique incidence. the correlation of amorphization and stress due to sputtering induced by oblique incidence has been discussed systematically. the possible mechanism of recrystallization is discussed in terms of vacancies produced in sputtering dominated regime and their migration during annealing treatment. our results reveal that with appropriate selection of oblique ion beam sputtering parameters, depth controllable surface amorphization and recrystallization may be fine-tuned to achieve co-existing amorphous and crystalline phases, playing a crucial role in fabrication of substrates for ic industry. Silicon, the workhorse of semiconductor industry, is being exploited for the various applications in numerous fields of nanotechnology like development of FETs and infrared detectors 1-3. The combined amorphous and crystalline phases of silicon play a crucial role in the fabrication of substrates for IC industry and hence, deciding circuit performance and reliability 4-6. The process of ion implantation has become a versatile tool for producing doped regions in FETs source, channel and drain in semiconductors 1,4-8. In this regard, low energy ion irradiation is widely employed in IC industry for producing bipolar transistors in semiconductors, especially in silicon substrates. This technique offers advantage of implanting controllable quantity of incident ions into the shallow surface layers of substrate with good accuracy 5-8. In addition to these beneficial features, this non-equilibrium method disorders the equilibrium crystalline structure of the single crystal material by inducing amorphization as well as damage in the lattice 5-7,9,10. The extent and nature of these ion beam induced imperfections in the lattice limits the performance and reliability of semiconductor devices and circuits 1,6,11. This, in turn, necessitates the recovery of crystalline order of the lattice 5,9,10,12,13. It is well known that recovery from disordered surface layers is eventually a diffusive process. Hence, the well known viable tool for restoring ordered crystalline structure, recovery of ion beam induced imperfections & defects and activation of dopants is thermal annealing 4,9,10,12. Ion i...

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Regrowth of Ge with different degrees of damage under thermal and athermal treatment

Abstract: In this report, the recrystallization of pre-damaged Ge samples is extensively investigated under steady-state thermal annealing and ultrafast thermal spike-assisted annealing generated by high-energy ions.

Cited by 6 publications

References 39 publications

Mechanistic details of the formation and growth of nanoscale voids in Ge under extreme conditions within an ion track

Mechanistic details of the formation and growth of nanoscale voids in Ge under extreme conditions within an ion track

Medium-energy ion irradiation of Si and Ge wafers: studies of surface nanopatterning and signature of recrystallization in 100 keV Kr⁺bombarded a-Si

Nano-scale depth-varying recrystallization of oblique Ar+ sputtered Si(111) layers

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Regrowth of Ge with different degrees of damage under thermal and athermal treatment

Abstract: In this report, the recrystallization of pre-damaged Ge samples is extensively investigated under steady-state thermal annealing and ultrafast thermal spike-assisted annealing generated by high-energy ions.

Cited by 6 publications

References 39 publications

Mechanistic details of the formation and growth of nanoscale voids in Ge under extreme conditions within an ion track

Mechanistic details of the formation and growth of nanoscale voids in Ge under extreme conditions within an ion track

Medium-energy ion irradiation of Si and Ge wafers: studies of surface nanopatterning and signature of recrystallization in 100 keV Kr+bombarded a-Si

Nano-scale depth-varying recrystallization of oblique Ar+ sputtered Si(111) layers

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Product

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Medium-energy ion irradiation of Si and Ge wafers: studies of surface nanopatterning and signature of recrystallization in 100 keV Kr⁺bombarded a-Si