Regenerative Er-doped Fiber Amplifier System for High-repetition-rate Optical Pulses

Liu, Yan; Wu, Kan; Li, Nanxi; Lan, Lanling; Yoo, Seongwoo; Wu, Xuan; Shum, Ping; Zeng, Shu-Guang; Tan, Xinyu

doi:10.3807/josk.2013.17.5.357

Cited by 9 publications

(4 citation statements)

References 17 publications

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“…Compared to lasers using III-V semiconductor gain media, lasers based on erbium-doped gain media have a wide gain bandwidth across the C and L bands. Such wide emission spectrum enables a wide tuning range of the laser wavelength [29][30][31] as well as potential for mode-locking [31][32][33][34]. Additionally, erbium-doped lasers can achieve a narrow linewidth with large side mode suppression ratios (SMSRs) due to homogeneously-broadened gain [35,36].…”

Section: Introductionmentioning

confidence: 99%

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform

Vermeulen

Magden

et al. 2018

Opt. Express

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A tunable laser source is a crucial photonic component for many applications, such as spectroscopic measurements, wavelength division multiplexing (WDM), frequency-modulated light detection and ranging (LIDAR), and optical coherence tomography (OCT). In this article, we demonstrate the first monolithically integrated erbium-doped tunable laser on a complementary-metal-oxide-semiconductor (CMOS)-compatible silicon photonics platform. Erbium-doped AlO sputtered on top is used as a gain medium to achieve lasing. The laser achieves a tunability from 1527 nm to 1573 nm, with a >40 dB side mode suppression ratio (SMSR). The wide tuning range (46 nm) is realized with a Vernier cavity, formed by two SiN microring resonators. With 107 mW on-chip 980 nm pump power, up to 1.6 mW output lasing power is obtained with a 2.2% slope efficiency. The maximum output power is limited by pump power. Fine tuning of the laser wavelength is demonstrated by using the gain cavity phase shifter. Signal response times are measured to be around 200 μs and 35 µs for the heaters used to tune the Vernier rings and gain cavity longitudinal mode, respectively. The linewidth of the laser is 340 kHz, measured via a self-delay heterodyne detection method. Furthermore, the laser signal is stabilized by continuous locking to a mode-locked laser (MLL) over 4900 seconds with a measured peak-to-peak frequency deviation below 10 Hz.

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Section: Introductionmentioning

confidence: 99%

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform

Vermeulen

Magden

et al. 2018

Opt. Express

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“…This allows for control of the laser wavelength by changing the thickness of the gain film, which will be discussed in more detail later. Third, common rare-earth-materials such as erbium, thulium or holmium have a wide emission spectrum, enabling a wide tuning range of the laser wavelength [29][30][31][32][33][34] as well as potential for mode-locking [32][33][34][35][36][37]. Fourth, compared to semiconductor lasers, rare-earth-ion-based lasers can provide much narrower laser linewidths because the optical pumping process involves no free carriers [30,[38][39][40].…”

Section: Introductionmentioning

confidence: 99%

Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers

Li¹,

Magden²,

Su³

et al. 2018

Opt. Express

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Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The AlO:Ho glass is used as gain medium, which provides broadband emission around 2 µm. By varying the distributed feedback grating period and AlO:Ho gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 µm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at > 2 µm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region.

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“…Over the past few years, nanomaterials such as graphene, carbon nanotubes (CNTs), and semiconductor quantum dots have been widely investigated for their applications to lasers, optical switches, photodetectors, and solar cells [1]- [3]. In particular, the applications of graphene and CNTs as nonlinear saturable absorbers (SA) for passively mode-locked fiber lasers [4], [5], are extremely attractive for their optical uses in such fields as optical communications, optical signal processing, biology, and medicine [6]- [8]. Extensive investigations on graphene and carbon nanotubes (CNTs) have not only introduced new nanomaterials with excellent physical and optical characteristics but have opened up the study of new 2-D materials as well.…”

Section: Introductionmentioning

confidence: 99%

Mode-Locked All-Fiber Lasers at Both Anomalous and Normal Dispersion Regimes Based on Spin-Coated <named-content content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="TeX">$\hbox{MoS}_{2}$</tex-math></inline-formula></named-content> Nano-Sheets on a Side-Polished Fiber

et al. 2015

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We demonstrate an all-fiberized mode-locked laser by employing Molybdenum Disulfide ðMoS 2 Þ spin-coated onto a side-polished fiber (SPF) as an in-line saturable absorber. Single crystal MoS 2 has been exfoliated via the Li intercalation method and then dispersed with large population of few-layer MoS 2 nano-sheets in ethanol. Subsequently, a saturable absorber has been prepared using a relatively simple method: spin-coating the uniform MoS 2 solution on the fabricated SPF without using any polymer or toxic procedure. Power-dependent transmission property of the prepared MoS 2 nano-sheets on the SPF was experimentally analyzed, providing the feasibility to apply it as an efficient in-line saturable absorption behavior. By deploying the MoS 2 SPF into a fiber laser cavity with finely tuned laser pump power and cavity dispersion, mode-locked pulses were obtained at anomalous and normal dispersion of the laser cavity. The self-started soliton pulses at the anomalous dispersion regime were generated with a spectral bandwidth of 9.96 nm at 1584 nm and a pulse duration of 521 fs. Moreover, by managing the dispersion to the normal regime, stable pulses at net-normal intra-cavity dispersion with 11.9 ps pulse duration were obtained with a spectral bandwidth of 18.2 nm at 1570 nm. The results prove the effectiveness of developing MoS 2 saturable absorbers and applications for pulsed laser operation.

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Regenerative Er-doped Fiber Amplifier System for High-repetition-rate Optical Pulses

Cited by 9 publications

References 17 publications

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform

Monolithically integrated erbium-doped tunable laser on a CMOS-compatible silicon photonics platform

Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers

Mode-Locked All-Fiber Lasers at Both Anomalous and Normal Dispersion Regimes Based on Spin-Coated <named-content content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="TeX">$\hbox{MoS}_{2}$</tex-math></inline-formula></named-content> Nano-Sheets on a Side-Polished Fiber

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