Regenerable Resistive Switching in Silicon Oxide Based Nanojunctions

Abstract

A nanomemristor based on SiO(2) is fabricated in situ with spatial control at the nanoscale. The proposed system exhibits peculiar properties such as the possibility to be regenerated after being stressed or damaged and the possibility to expose the metal and the oxide interfaces by removing the top electrodes.

Memristive behavior of Al2O3 film with bottom electrode surface modified by Ag nanoparticles

“…Resistive random access memory (RRAM) devices have attracted considerable attentions due to its advantages of simple structures, rapid programming speed, high areal density, low power consumption and long retention time [1][2][3][4][5], and it is proposed as a potential next-generation candidate for nonvolatile memory. Various materials presenting resistive switching characteristics have been reported, including transition metal oxide materials (TMO), such as NiO, ZrO 2 , ZnO, TiO 2 , HfO 2 , Nb 2 O 5 , Cu x O [5][6][7][8][9][10], chalcogenides, perovskite oxides and organic materials [11][12][13].…”

Reversible Nanopatterning on Polypyrrole Films by Atomic Force Microscope Electrochemical Lithography

“…In addition, the fabrication of memory devices at the micrometer scale can be realized as well utilizing parallel electrochemical lithography approaches which are by the application of stamps instead of AFM tips. [ 26,27 ] …”

Application of scanning probe oxidation lithography in fabrication of micro-nano devices

“…利用扫描探针氧化刻蚀技术可在薄层过渡金属二 硫族化合物上制备出场效应晶体管 [20,70] 图 12 (a) 在单层石墨烯上制备的带状器件的AFM图像; (b) 在T=4.2 K, B=0 T下测量的两端电导G与栅压V g 的关系; (c) 在T=4.2 K, B=9 T下测量的两端电导G与栅压V g 的关系 [69] (网络版彩图) Garcia等 [20] 和读写可擦除存储器件 [78] ; 传感器, 如紫外 线传感器 [79] 、检测NO的电阻式传感器 [80] ; 电阻开关 器件 [75,81] [82,83] , 如"Quattro"悬臂 阵列技术是一个非常强大的成像设备, 4个主动悬臂…”