Refractory MoSi₂and MoSi₂/polysilicon bulk CMOS Circuits

Abstract

Refractory MoSi, and MoSi, /polysilicon have been used to fabricate high-performance 3~m bulk CMOS circuits. Thirty-nine stage ring oscillators, with a fan-in and fan-out of 1, exhibit a switching delay/stage of 1.2 to 1.4115, and a power-delay product of 0.22 to 0.25pJ at a supply voltage of 5 V. The powerdelay product ranges from 40fJ for a delay of 9ns to 1pJ for a delay of 0.611s. Self-cheoking pattern generator circuits implemented with the same technology show an operating frequency as high as 80 MHz, which corresponds to approximate in-circuit delays of 1.2ns/stage. M

The Effect of Implantation of Phosphorus into Sputtered MoSi2 Thin Films

“…In the course of development of a refractory and highly conductive interconnection system for verylarge-scale-integrated (VLSI) circuits, several refractory metal silicides, such as MoSi2 (1)(2)(3)(4)(5), WSi2 (6)(7)(8)(9), and TaSi2 (10,11), are under study as an alternative to the widely used doped polycrystalline silicon (poly-Si). These .metal silicides, unlike the metals, have resistance to high temperature oxidation and to most chemicals routinely encountered during device fabrication.…”