Refractive index of TlGaAs

Abstract

Refractive index has been determined from reflectance measurements at 77‐300 K for Tlx Ga1–x As samples with x ≤ 0.077 prepared by low‐temperature molecular‐beam epitaxy. A very high refractive index of around 4.5 at room temperature in the transparent wavelength region has been revealed for Tlx Ga1–x As with x = 0.077. The temperature coefficient of the refractive index was found to increase with Tl content. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)