Refractive index of ion-implanted GaAs

Kachare, A. H.; Spitzer, W. G.; Fredrickson, J. E.

doi:10.1063/1.323292

Cited by 46 publications

(11 citation statements)

References 8 publications

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“…The value of n for halide perovskites is significantly larger than that of SiO 2 (1.09; Popova et al, 1972;Kitamura et al, 2007-−1.45;Malitson, 1965;Tan, 1998) or most polymers, making them a good material for resonant nanostructures due to their high optical contrast. Because n for Cs 2 AgRhCl 6 is much lower than that of Si (n = 3.673; Refractiveindex.Info; Aspnes and Studna, 1983) or GaAs (3.4-3.7; Kachare et al, 1976;Aspnes et al, 1986;Jellison, 1992;Skauli et al, 2003), it provides high optical contrast with these materials in advanced hybrid structures (Makarov et al, 2019). By contrast, the extinction coefficient for Cs 2 AgRhCl 6 is calculated to be very small and is close to 0.006 near the fundamental absorption edge of dispersion (Figure 6).…”

Section: Optical Propertiesmentioning

confidence: 98%

The Cs2AgRhCl6 Halide Double Perovskite: A Dynamically Stable Lead-Free Transition-Metal Driven Semiconducting Material for Optoelectronics

Varadwaj

Marques

2020

Front. Chem.

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A-Site doping with alkali ions, and/or metal substitution at the B and B ′-sites, are among the key strategies in the innovative development of A 2 BB ′ X 6 halide double perovskite semiconducting materials for application in energy and device technologies. To this end, we have investigated an intriguing series of five halide-based non-toxic systems, A 2 AgRhCl 6 (A = Li, Na, K, Rb, and Cs), using density functional theory at the SCAN-rVV10 level. The lattice stability and bonding properties emanating from this study of A 2 AgRhCl 6 matched well with those that have already been synthesized, characterized and discussed [viz. Cs 2 AgBiX 6 (X = Cl, Br)]. Exploration of traditional and recently proposed tolerance factors has enabled us to identify A 2 AgRhCl 6 (A = K, Rb and Cs) as stable double perovskites. The band structure and density of states calculations suggested that the electronic transition from the top of the valence band [Cl(3p)+Rh(4d)] to the bottom of the conduction band [(Cl(3p)+Rh(4d)] is inherently direct at the X-point of the first Brillouin zone. The (non-spin polarized) bandgap of these materials was found in the range 0.57-0.65 eV with SCAN-rVV10, which were substantially smaller than those computed with hybrid HSE06 and PBE0, and quasi-particle GW methods. This, together with the appreciable refractive index and high absorption coefficient in the region covering the range 1.0-4.5 eV, enabled us to demonstrate that A 2 AgRhCl 6 (A = K, Rb, and Cs) are likely candidate materials for photoelectric applications. The results of our phonon calculations at the harmonic level suggested that the Cs 2 AgRhCl 6 is the only system that is dynamically stable (no imaginary frequencies found around the high symmetry lines of the reciprocal lattice), although the elastic moduli properties suggested all five systems examined are mechanically stable. Keywords: A 2 AgRhCl 6 halide double perovskites, first-principles studies, optoelectronic properties, geometrical, dynamical and mechanical stabilities, DOS and band structures Varadwaj and Marques Stable Halide Double Perovskites

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Section: Optical Propertiesmentioning

confidence: 98%

The Cs2AgRhCl6 Halide Double Perovskite: A Dynamically Stable Lead-Free Transition-Metal Driven Semiconducting Material for Optoelectronics

Varadwaj

Marques

2020

Front. Chem.

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“…The 1DPC is characterized by two periodic dielectric media: GaAs, AlAs and a doped QDs defect layer. The optical thickness of each of the layers is selected by the standard expression, n GaAs d GaAs = mλ0 4 and n AlAs d AlAs = mλ0 4 , where λ 0 = 1.55 µm , n GaAs = 3.4 and n AlAs = 2.9 are the reflective index selected according to [34,35] and m = 1. The reflective index of the defect layer is n d = n GaAs and its optical thickness is n d d d = mλ 0 /2.…”

Section: Pulse Light Propagation In 1dpcmentioning

confidence: 99%

Optical bistability in reflection of the laser pulse in a 1D photonic crystal doped with four-level InGaN/GaN quantum dots

2021

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The present study aimed to evaluate the optical properties of 1D photonic crystal (PC) with a defect layer doped by four-level InGaN/GaN quantum dots. Transient and steady-state behavior of the medium completely relies on the intensities and relative phases of coherent coupling fields. In addition, the transient absorption–dispersion spectra of 1DPC can be easily adjusted by choosing the controllable parameters properly. Furthermore, the transmitted and reflected light pulses at λ = 1.55 μ m (long wavelength) can be tuned by controlling the Rabi frequencies of applied light due to their potential applications in all-optical systems. Furthermore, the effect of relative phase between applied fields on the light propagation was evaluated through the medium. In addition, all-optical switching time was found for subluminal/superluminal and absorption/transmission of light propagation. The required switching time ranges between 2–7 ps. The proposed model may provide some new possibilities for technological applications in optoelectronics and solid-state quantum information science and systems due to large applications in signal processing.

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“…The structure of the 1DPC is characterized by three di electric media: GaAs, AlAs and a defect layer, as shown in figure 1. The refractive indices of GaAs and AlAs are selected as n GaAs = 3.4 and n AlAs = 2.9 according to [43,44]. The number of layers is 21 and the wavelength for the selected refractive index is λ 0 = 1.55 µm.…”

Section: Pulse Propagation In a 1dpcmentioning

confidence: 99%

Slow and fast light propagation and controllable switch at λ = 1.55 µm in a photonic crystal with a defect layer doped by an InAs/GaAs quintuple-coupled quantum dot molecule nanostructure

Shiri

2019

Laser Phys.

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The transient and steady-state behavior of the probe absorption and dispersion at 1.55 µm wavelength through a 1D photonic crystal with a defect layer doped by an InAs/GaAs quintuple quantum dot molecule nanostructure are discussed. We show that the group velocity of a light pulse can be controlled just by controlling the rate of incoherent pumping and interdot tunneling. We also investigate the electro-optical switching time of light propagation from subluminal to superluminal or vice versa. The time required to switch from subluminal to superluminal light propagation is found to be in the range 17-34 ps. Such controllable optical properties in a 1D photonic crystal with a defect layer may provide some new possibilities for technological applications in optoelectronics, solid-state quantum information science and systems dealing with signal processing.

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Refractive index of ion-implanted GaAs

Cited by 46 publications

References 8 publications

The Cs2AgRhCl6 Halide Double Perovskite: A Dynamically Stable Lead-Free Transition-Metal Driven Semiconducting Material for Optoelectronics

The Cs2AgRhCl6 Halide Double Perovskite: A Dynamically Stable Lead-Free Transition-Metal Driven Semiconducting Material for Optoelectronics

Optical bistability in reflection of the laser pulse in a 1D photonic crystal doped with four-level InGaN/GaN quantum dots

Slow and fast light propagation and controllable switch at λ = 1.55 µm in a photonic crystal with a defect layer doped by an InAs/GaAs quintuple-coupled quantum dot molecule nanostructure

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