Refractive index of GaN

Abstract

The refractive index of GaN and its temperature dependence have been measured using plane‐parallel platelets with E ⊥ c. In this direction at 300 K the index is 2.67 at 3.38 eV, 2.33 at 1.0 eV, and has an extrapolated value of 2.29 ± 0.005 at 0 eV. The difference in the refractive indices for E ⊥ c and E ‖ c is 1.5 ± 0.2% at 5000 Å. A Debye temperature of about 600 K is estimated from the measured temperature dependence. The diffuse reflexion spectrum of GaN powder has been measured and the temperature dependence of the absorption edge is plotted.

Electronic Structure and Optical Properties of ZnGeN2

“…It is of interest to compare this with GaN for which the birefringence is similar, also about 0.03 and also positive uniaxial, but now with the c-axis as the optical axis. [14] In GaN only type II (oeo) phase matching using the xzx component is possible because the xzz component of χ (2) vanishes by symmetry. Note that in the usual notation the first component in xzx indicates the sum frequency or doubled frequency, while the last two indicate the fundamental.…”

Optical Cavity Effects in ZnO Nanowire Lasers and Waveguides

“…Typical values of dn/dT are approximately 10 -5 K -1 . 27 In contrast, saturation of absorption leads to a blue-shift of the modes through a decrease in the real part of the refractive index near the exciton absorption bands. 28 Here, the cavity resonance frequency…”

Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon

“…3a) the average mode spacing was estimated to be 0.89 nm which corresponds to the perimeter of 58 µm for either a ring or standing-wave cavity (we assume n e = n -λ·dn/dλ = 2.65 for the effective refractive index of GaN at 370 nm, taken from Ref. [12]). For 5-µm wide pyramids (Fig.…”