Reflectivity and Abnormal Absorption at ITO/Al Interface

Abstract

The electrical and optical thermal stability of indium tin oxide (ITO)/Al bilayers are investigated in this study. The electrical resistivity of ITO and ITO/Al multilayers, both about 1 9 10 -3 X cm after annealing at 300°C for 1 min, are measured by the four-probe measurement method. In addition to the electrical measurements, we also observe the rapid initial diffusion of Al atoms into the ITO thin films. When the diffusing elemental Al atoms occupy interstitial sites they tend to form defects, causing a serious decrease in the reflectance of the a-ITO/Al bilayer in the wavelength region from 400 nm to 600 nm.

Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga2O3/Ag/Ga2O3 Transparent Conductive Electrode

“…Indium tin oxide (ITO) is widely used as transparent contact layers in traditional GaN-based blue and green LEDs. However, there is serious light absorption in the ITO in the ultraviolet band due to the band gap of ITO ranging from 3.5 eV to 4.3 eV [10,11]. Previous studies reported that doping metals in ITO would reduce the light absorption in near UV LEDs.…”

Highly transparent conductive ITO/Ag/ITO trilayer films deposited by RF sputtering at room temperature

“…On one hand, the TCFs of bilayer structure, e.g., semiconductor/semiconductor [16][17][18] and semiconductor/metal [19][20][21] bilayer films, were studied by some authors. On the other hand, TCF/metal/TCF trilayer structures 22 were rapidly developed since they might provide optical and electrical characteristics superior to those single-layer or bilayer TCFs.…”