Reflection/transmission confocal microscopy characterization of single-crystal diamond microlens arrays

Gu, Erdan; Choi, Hyun-Woong; Liu, C.; Griffin, C.; Girkin, John M.; Watson, I. M.; Dawson, Martin D.; McConnell, Gail; Gurney, Alison M.

doi:10.1063/1.1695101

Cited by 58 publications

(28 citation statements)

References 12 publications

(9 reference statements)

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“…We use a LSM 510 module and an Axiovert 200M inverted microscope (Carl Zeiss AG, Germany). The technique is similar to the one used in Gu et al [24]. Our specific setup is shown in detail in Fig.…”

Section: Experimental Part and Resultsmentioning

confidence: 95%

Arrays of microlenses with variable focal lengths fabricated by restructuring polymer surfaces with an ink-jet device

Pericet-Cámara¹,

Best²,

Nett³

et al. 2007

Opt. Express

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Abstract:We report of a method for fabricating two-dimensional, regular arrays of polymer microlenses with focal lengths variable between 0.2 and 4.5 mm. We first make concave microlenses by ink-jetting solvent on a polymer substrate with a commercial drop-on-demand device. Solvent evaporation restructures the surface by a series of combined effects, which are discussed. In the second step we obtain convex elastomeric microlenses by casting the template made in the first step. We demonstrate the good optical quality of the microlenses by characterising their surfaces with atomic force microscopy and white light interferometry, and by directly measuring their focal lengths with ad-hoc confocal laser scanning microscopy.

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Section: Experimental Part and Resultsmentioning

confidence: 95%

Arrays of microlenses with variable focal lengths fabricated by restructuring polymer surfaces with an ink-jet device

Pericet-Cámara¹,

Best²,

Nett³

et al. 2007

Opt. Express

View full text Add to dashboard Cite

show abstract

“…On the other hand, semiconductor based micro lenses are typically fabricated using focused ion beam or pattern transfer from photoresist to semiconductor by wet or dry etching. [27][28][29][30][31][32][33][34][35] The refractive indices are matched but only low aspect ratio micro lenses are typically achieved. Although high aspect ratio GaAs hemispheres have been attempted, 36 no design rules or detailed processing steps have been published and the large volume production capability was unclear.…”

Section: Fabrication Resultsmentioning

confidence: 99%

Ultrahigh luminescence extraction via the monolithic integration of a light emitting active region with a semiconductor hemisphere

Ding

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Investigation of surface plasmon coupling with the quantum well for reducing efficiency droop in GaN-based light emitting diodes J. Appl. Phys. 114, 113104 (2013) A light emitting active region with three InGaAs quantum wells is monolithically integrated with a GaAs hemisphere as a means to increase the extraction efficiency of light emitting diodes. For a device with a small active region and large hemisphere and optimal antireflection, theoretical calculations show that the extracted fraction of spontaneous emission incident on the hemisphere is greater than 99.9% and the overall extraction efficiency of the integrated device is as high as 90%.The hemisphere is fabricated with a consistent aspect ratio ͑height versus width͒ using photoresist reflow and inductive coupled plasma etching. Detailed numerical simulations are performed to predict the reflow and dry etch processes as an aid to device fabrication. The fabrication results show that near perfect GaAs hemispheres can be successfully integrated with light emitting active regions and that the resulting light emitting diodes have the potential for mass production.

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“…The ICP and rf powers were set to 600 W and 300 W, respectively. The resulting profiles of the lenses were evaluated by atomic force microscopy, whilst their focal lengths were measured by confocal microscopy, details of which can be found in ref [5]. …”

Section: Methodsmentioning

confidence: 99%

Nitride micro‐display with integrated micro‐lenses

Choi

Girkin

et al. 2005

phys. stat. sol. (c)

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We report progress in control of the emission from both parallel-addressed and matrix-addressed micro-array light-emitting diodes (micro-LEDs), using integrated micro-lenses. The integrated matrix-addressed device consists of a 128 × 96 element array with 470 nm emission, aligned to a 128 × 96 element sapphire micro-lens array. The lenses have a diameter of 12 µm, a centre height of 1.8 µm and a measured focal length of 8 µm. The root-mean-square (r.m.s.) roughness of the lenses, as measured by atomic force microscopy (AFM), is better than 3 nm, ensuring high optical quality. The integrated array enables the light emitted from the individual elements to be well-resolved

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Reflection/transmission confocal microscopy characterization of single-crystal diamond microlens arrays

Cited by 58 publications

References 12 publications

Arrays of microlenses with variable focal lengths fabricated by restructuring polymer surfaces with an ink-jet device

Arrays of microlenses with variable focal lengths fabricated by restructuring polymer surfaces with an ink-jet device

Ultrahigh luminescence extraction via the monolithic integration of a light emitting active region with a semiconductor hemisphere

Nitride micro‐display with integrated micro‐lenses

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