Reflection mode imaging with nanoscale resolution using a compact extreme ultraviolet laser

Brizuela, F.; Vaschenko, G.; Brewer, C.; Grisham, M.; Menoni, Carmen S.; Marconi, M. C.; Rocca, J. J.; Chao, Weilun; Liddle, J. Alexander; Anderson, Erik H.; Attwood, David; Виноградов, А. В.; Artioukov, Igor A.; Pershyn, Y. P.; Кондратенко, В. В.

doi:10.1364/opex.13.003983

Cited by 40 publications

(16 citation statements)

References 10 publications

(14 reference statements)

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“…26a [107]. It consists of a compact capillary-discharge 46.9 nm laser, followed by a Schwarzschild condenser that focuses the light onto a sample positioned at 45…”

Section: Applications Of Sxlsmentioning

confidence: 99%

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X-Ray laser: past, present, and future

2009

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Abstract:In this review we concentrate our attention on X-ray laser research and development covering the so called soft Xray region (down to ∼ 10 nm) and the "water window" region (down to 2.3 -4.4 nm). We present the development of soft X-ray lasers (SXLs) and their applications using primarily collisional and recombination schemes. We present the paths towards compact systems and major achievements to date. We discuss conditions for using both schemes to reach the "water window" region. In this discussion we also present another possible schemes based on photo-pumping, inner shell transitions in atoms and ions and "Doppler Compression" of IR laser radiation down to the X-ray region with its intrinsic tunability possibility. A significant part of the review is dedicated to the wide range of applications of SXLs with wavelengths at and above 10 nm. Also discussed is the potential of extending the range of biological applications for the "water window" region.Image of wafer with polysilicon lines on silicon (top: 250 nm, bottom: 100 nm widths of lines)

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“…26a [107]. It consists of a compact capillary-discharge 46.9 nm laser, followed by a Schwarzschild condenser that focuses the light onto a sample positioned at 45…”

Section: Applications Of Sxlsmentioning

confidence: 99%

“…The Schwarzschild [107] condenser has a numerical aperture (NA) of 0.18 and a throughput of only ∼ 1%. This low throughput can be improved by at least one order of magnitude using multilayer coatings with the best reflectivity available at this wavelength being ∼ 40% [108].…”

Section: Applications Of Sxlsmentioning

confidence: 99%

X-Ray laser: past, present, and future

2009

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“…These properties make this radiation an interesting candidate for time-resolved microscopy [7], in particular using holographic approaches [8], at least in the long-wavelength part of the XUV range (around 30 nm) where the number of photons per pulse and per harmonic can be as high as 10 9 − 10 10 . A few promising experiments have been performed, using, in particular, digital holographic techniques in the XUV [5,9] and X-ray range [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

XUV digital in-line holography using high-order harmonics

et al. 2008

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A step towards a successful implementation of timeresolved digital in-line holography with extreme ultraviolet radiation is presented. Ultrashort XUV pulses are produced as high-order harmonics of a femtosecond laser and a Schwarzschild objective is used to focus harmonic radiation at 38 nm and to produce a strongly divergent reference beam for holographic recording. Experimental holograms of thin wires are recorded and the objects reconstructed. Descriptions of the simulation and reconstruction theory and algorithms are also given. Spatial resolution of few hundreds of nm is potentially achievable, and micrometer resolution range is demonstrated.

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“…28 and nano-scaled microscopy. [31][32][33] The Sc/Si MXMs were specially designed and fabricated as optics for capillary-discharge lasers capable of providing the radiation at λ=46.9 nm with fluences up to 100 J/cm 2 per pulse. 30 We reported earlier about some results on the damage to Sc/Si MXMs under irradiation of laser pulses.…”

Section: Introductionmentioning

confidence: 99%

Structural transformations in Sc/Si multilayers irradiated by EUV lasers

Voronov

Zubarev²,

Pershyn³

et al. 2007

SPIE Proceedings

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Multilayer mirrors for the extreme ultraviolet (EUV) are key elements for numerous applications of coherent EUV sources such as new tabletop lasers and free-electron lasers. However the field of applications is limited by the radiation and thermal stability of the multilayers. Taking into account the growing power of EUV sources the stability of the optics becomes crucial. To overcome this problem it is necessary to study the degradation of multilayers and try to increase their temporal and thermal stability. In this paper we report the results of detailed study of structural changes in Sc/Si multilayers when exposed to intense EUV laser pulses. Various types of surface damage such as melting, boiling, shock wave creation and ablation were observed as irradiation fluencies increase. Cross-sectional TEM study revealed that the layer structure was completely destroyed in the upper part of multilayer, but still survived below. The layers adjacent to the substrate remained intact even through the multilayer surface melted down, though the structure of the layers beneath the molten zone was noticeably changed. The layer structure in this thermally affected zone is similar to that of isothermally annealed samples. All stages of scandium silicide formation such as interdiffusion, solid-state amorphization, silicide crystallization etc., are present in the thermally affected zone. It indicates a thermal nature of the damage mechanism. The tungsten diffusion barriers were applied to the scandium/silicon interfaces. It was shown that the barriers inhibited interdiffusion and increased the thermal stability of Sc/Si mirrors.

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Reflection mode imaging with nanoscale resolution using a compact extreme ultraviolet laser

Cited by 40 publications

References 10 publications

X-Ray laser: past, present, and future

X-Ray laser: past, present, and future

XUV digital in-line holography using high-order harmonics

Structural transformations in Sc/Si multilayers irradiated by EUV lasers

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