Reflection high-energy electron diffraction pattern of GaN grown on 6H–SiC by metalorganic molecular beam epitaxy using AlGaN template

Abstract

Reactive molecular-beam epitaxy of GaN layers directly on 6H-SiC(0001) Appl. Phys. Lett. 75, 944 (1999); 10.1063/1.124562 Growth of cubic GaN by phosphorus-mediated molecular beam epitaxyRefraction high-energy diffraction ͑RHEED͒ patterns of GaN layers during the growth by metalorganic molecular beam epitaxy using ͑0001͒6H-SiC and metalorganic vapor phase epitaxy grown Al 0.05 Ga 0.95 N/(0001)6H-SiC as substrates are observed. The patterns in initial growth are different for the GaN layers grown on 6H-SiC substrate and AlGaN template. The in-plane lattice constants of grown GaN layers estimated the duration of RHEED patterns are also discussed.