Reflection electron microscopy study of structural transformations on a clean silicon surface in sublimation, phase transition and homoepitaxy

Латышев, А. В.; Aseev, A. L.; Krasilnikov, A.B.; Stenin, S. I.

doi:10.1016/0039-6028(90)90387-n

Cited by 124 publications

(21 citation statements)

References 25 publications

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“…͑7͒ K(T) has an Arrhenius type dependence with the sublimation energy of Si which is about 4.2 eV. [5][6][7] For the same range of temperatures, when the vapor saturation over the substrate is controlled, the step mobility exhibits the same behavior. 16 The rate depends in this case, on the interstep distance and on the under or upper saturation ͑see Sec.…”

Section: Step Dynamics On Si"111…mentioning

confidence: 96%

Experimental evidence for an Ehrlich-Schwoebel effect on Si(111)

2002

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We have used reflection electron microscopy to study ͑1͒ the drift velocity of positive monolayer islands on Si͑111͒ under near equilibrium conditions and direct current ͑dc͒ heating and ͑2͒ the difference between the velocity of monoatomic steps heated by direct current in the step-up and step-down direction under free sublimation. Our results obtained at around 1200°C show that the islands move in the opposite direction of the dc and the step velocity for ascending steps with respect to the dc direction is smaller than the velocity for opposite steps with the same interstep distance. These two experimental results are a clear qualitative prove of the existence of an Ehrlich-Schwoebel effect on Si͑111͒. We analyze the experimental results for the step dynamics within a modified Burton, Cabrera, and Frank model. We find that a quantitative agreement between the model and the experimental results needs an enhanced effect of the electric field on the diffusion species.

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Section: Step Dynamics On Si"111…mentioning

confidence: 96%

Experimental evidence for an Ehrlich-Schwoebel effect on Si(111)

2002

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“…͑2͒ An adatom supply from the step edge increases n. However, its contribution is negligible in our temperature range, as described above. ͑3͒ Thermal desorption decreases the number of adatoms, but has been reported to be active only at temperatures above 1000 K. 18,19 Thus this contribution is also negligible. ͑4͒ Adsorption of adatoms into the step edge decreases the number of adatoms.…”

Section: Bombardment At High Temperatures: Competition Between Thementioning

confidence: 99%

Formation and healing of defects at theSi(111)7×7surface under low-energy ion bombardment

1998

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We studied the formation and healing of adatom defects on a Si(111)7ϫ7 surface bombarded by 0.5-keV Ar ions. Scanning tunneling microscopy showed that adatoms were missing from the Si(111)7ϫ7 surface. Increasing the temperature during the bombardment increased the percentage of missing adatom sites. However, the percentage saturated at 400 K, then decreased with temperature. This temperature dependence was due to competition between the formation and healing of adatom defects; defect formation dominated at low temperatures, but was overcome by healing at high temperatures. We analyzed the temperature dependence using a rate equation for missing adatoms which included the temperature-independent sputtering and other temperature-dependent formation and healing processes. Activation energies of 0.29 and 0.39 eV were obtained for the temperature-dependent formation and the healing of adatom defects. The temperature-dependent formation was attributed to vacancy-adatom recombination, and the temperature-dependent healing was attributed to the interstitial atom-missing adatom site recombination. These vacancy and interstitial atoms were generated in the collision cascade under the surface. Some of them migrated to the surface and contributed to the temperature-dependent formation and healing of missing adatoms.

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“…6,16 Recent experimental studies have affirmed that in both annealing regimes, antibands are located close to lower step bunches, while in the case of the attachment-limited sublimation, they are expected to grow closer to the upper step bunch when the heating current is driven in the up-step direction. 17 This was explained by a possible change in sign of surface adatoms' effective charge from positive at higher temperatures to negative at lower.…”

Section: Theory Of Step Shape Instability and Antiband Formationmentioning

confidence: 99%

Antiband instability on vicinal Si(111) under the condition of diffusion-limited sublimation

et al. 2012

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In this paper, we investigate the antiband instability on vicinal Si(111) surfaces with different angles of misorientation. It is known that prolonged direct current-annealing of Si(111) results in the formation of antibands; i.e., the step bunches with the opposite slope to the primary bunches. We provide a theoretical description of antiband formation via the evolution of the atomic steps' shape. We also derive a criterion for the onset of the antiband instability under the conditions of sublimation controlled by slow adatom surface diffusion. We examine this criterion experimentally by studying the initial stage of the antiband formation at a constant temperature of 1270 • C while systematically varying the applied electromigration field. The experiment strongly supports the validity of the derived theoretical criterion and indicates the importance of accounting for the factor of critical field in the theoretical modeling of step bunching or antiband instabilities. Deduced from the comparison of theory and experiment, the Si surface atoms' effective charge cannot exceed double the elementary charge, set by the lower limit of kinetic characteristic length d s = 0.3 nm. Using d s = 1.7 − 4.5 nm draws values of the effective charge in line with the values reported in earlier studies.

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Reflection electron microscopy study of structural transformations on a clean silicon surface in sublimation, phase transition and homoepitaxy

Cited by 124 publications

References 25 publications

Experimental evidence for an Ehrlich-Schwoebel effect on Si(111)

Experimental evidence for an Ehrlich-Schwoebel effect on Si(111)

Formation and healing of defects at theSi(111)7×7surface under low-energy ion bombardment

Antiband instability on vicinal Si(111) under the condition of diffusion-limited sublimation

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