Reflectance spectrum of crystalline and vitreous Si<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>at low temperature

Rossinelli, M.; Bösch, M. A.

doi:10.1103/physrevb.25.6482

Cited by 17 publications

(3 citation statements)

References 16 publications

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“…Only the 10.1 eV band is assigned to the oxygen 2p to 3s interband transition [14,15]. The peak position of the band shifts toward higher energies under cooling , indicating that this band has excitonic nature as same as the 10.2 eV band in pure silica glass [10][11][12]. This higher energy shift is consistent with a result of higher energy shift of absorption edge at around 200 nm in its transmission spectrum.…”

Section: Ultraviolet Reflection Spectrummentioning

confidence: 65%

“…However bandwidths for these lithium silicate glasses are broad as compared with that of pure silica glass and increase with increasing Li2O concentration. The four-intense bands relate to the interband transitions on oxygen atom as same as pure silica glass [10][11][12][13] . Only the 10.1 eV band is assigned to the oxygen 2p to 3s interband transition [14,15].…”

Section: Ultraviolet Reflection Spectrummentioning

confidence: 99%

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Structure of Densified Lithium Silicate Glasses.

Kitamura

Fukumi

Mizoguchi

et al. 1998

THE REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY

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Structure analysis has been performed on permanently densified lithium silicate glasses by means of Raman scattering and ultraviolet (uv) reflection spectra. Higher energy shifts of Raman bands at around 450 and 580 cm-1 and lower energy shift of first uv reflection band were found after densification. It is deduced that these shifts are due to the decrease of Si-O-Si bond angle and the increase of Si-O bond length. The decrease of the magnitude in densification and these band shifts with lithium concentration might be due to obstruction of the structural change by lithium ions.

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Section: Ultraviolet Reflection Spectrummentioning

confidence: 65%

Section: Ultraviolet Reflection Spectrummentioning

confidence: 99%

Structure of Densified Lithium Silicate Glasses.

Kitamura

Fukumi

Mizoguchi

et al. 1998

THE REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY

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show abstract

“…2(a) and incomplete ionization [14] of the dopant using Fermi-Dirac (FD) carrier statistics in n + -polySi. Temperature dependence of occurs due to unequal downshifts of the CBs of the n + -polySi and the SiO 2 caused due to spreading of the Urbach tail towards the midgap without any experimentally observed [16] shift of the valence band (VB) top as schematically depicted in the inset (right) in Fig. 2(a).…”

Section: Current Conduction Mechanismmentioning

confidence: 98%

Mechanism of oxide thickness and temperature dependent current conduction in n⁺-polySi/SiO₂/p-Si structures — a new analysis

Samanta¹

2017

J. Semicond.

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The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO2) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n+-polySi) gate. The analysis utilizes the measured gate current density JG at high oxide fields Eox in 5.4 to 12 nm thick SiO2 films between 25 and 300 °C. The leakage current measured up to 300 °C was due to Fowler–Nordheim (FN) tunneling of electrons from the accumulated n +-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO2 conduction band (CB). It was observed that PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide–semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.

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Electronic Structures of Crystalline and Amorphous Silicon Dioxide and Related Materials

Ching

1986

Structure and Bonding in Noncrystalline Solids

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Reflectance spectrum of crystalline and vitreous SiO2at low temperature

Cited by 17 publications

References 16 publications

Structure of Densified Lithium Silicate Glasses.

Structure of Densified Lithium Silicate Glasses.

Mechanism of oxide thickness and temperature dependent current conduction in n⁺-polySi/SiO₂/p-Si structures — a new analysis

Electronic Structures of Crystalline and Amorphous Silicon Dioxide and Related Materials

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Reflectance spectrum of crystalline and vitreous SiO2at low temperature

Cited by 17 publications

References 16 publications

Structure of Densified Lithium Silicate Glasses.

Structure of Densified Lithium Silicate Glasses.

Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis

Electronic Structures of Crystalline and Amorphous Silicon Dioxide and Related Materials

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Product

Resources

About

Mechanism of oxide thickness and temperature dependent current conduction in n⁺-polySi/SiO₂/p-Si structures — a new analysis