This chapter describes the use of the focused ion beam instrument for the fabrication of needle-shaped specimens containing specifi c subsurface features of a sample. These specimens are useful for the analysis of isolated features of a material by different characterization techniques, among other applications. We show the application of this methodology in the fi eld of semiconductor materials, in particular for the analysis by electron tomography of InAs/InP-and InAs/GaAs-capped quantum dots. The proposed methodology allows the correlation of the structural properties of isolated objects located inside the material with their functional properties, avoiding the interference with other features in the material.
IntroductionNowadays, the development of advanced materials with applications in nanotechnology relies not only on the ability to design and fabricate these materials but also on the capability to fully characterize their structural and functional properties. Generally, these structures are characterized in bulk, where information from the material as a whole is obtained. However, often it is useful to investigate isolated objects in the material, avoiding the interference from other features of the structure. As an example, the experimental analysis of the effect of size, shape, and arrangement of silver nanoparticles on the electromagnetic fi elds induced by their localized