Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

Sk, Lee; Zetterling, Carl-Mikael; Östling, Mikael; Åberg, Ingvar; Magnusson, Martin H.; Deppert, Knut; Wernersson, Lars‐Erik; Samuelson, Lars; Litwin, A.

doi:10.1016/s0038-1101(02)00122-3

Cited by 70 publications

(55 citation statements)

References 15 publications

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“…The equation (1) and Figure 4 show that the presence of the metal nano-dots and the difference of the SBHs between the Ni and the inserted metals can lead to the increase in the electric field at the MS interface. It was shown that an increase of the electric field causes the lowering of a barrier height [4,6]. Therefore, the reason why the sample with the Pt nano-dots exhibits the best I-V behaviors can be attributed to the largest work function of Pt among the metals and the enhanced electric field due to the small size of Pt dots, as shown in Fig.…”

Section: Resultsmentioning

confidence: 95%

“…Based on the general theory of electronic transport at the MS interface and calculated electric field distribution, the improved electrical behaviors of the samples with the nano-dots may be explained as follows. According to the electronic transport theory at the MS interface with inhomogeneous SBH [4], the electric field for circular patch geometry (nano-dot) at the MS interface is given as [4,6] , 2 1 3 2 2 2 2 2 2 …”

Section: Resultsmentioning

confidence: 99%

“…Recently, however, some experimental and theoretical results showed that SBHs vary laterally at a MS interface due to the presence of nano-particles [4,5]. Very recently, nano-particles have been employed to lower local SBHs, which play a determining role in reducing specific contact resistance [6][7][8]. These results show that the formation of nano-dots would affect the electrical properties of metal contacts to semiconductors.…”

Section: Introductionmentioning

confidence: 99%

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Nano‐dot addition effect on the electrical properties of Ni contacts to p‐type GaN

Sohn

Song

Leem

et al. 2004

phys. stat. sol. (c)

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The correlations between the electrical behaviors of Ni contacts on p-GaN and the insertion of metal nano-dots at the Ni/GaN interfaces have been investigated. The Pt, Au, and Ti nano-dots directly deposited on p-GaN using the anodic porous alumina membrane mask by electron beam evaporation. It is shown that the samples with the inserted nano-dots exhibit better electrical behaviors compared with those without the nano-dots. The improvement of the electrical behaviors is explained in terms of the difference of the Schottky barrier heights between the Ni film and the metal nano-dots, and the enhanced electrical field at the Ni/GaN interfaces due to the presence of the nano-dots. Based on experimental and theoretical results, the possible mechanisms for the improved electrical behaviors is discussed.

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Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Nano‐dot addition effect on the electrical properties of Ni contacts to p‐type GaN

Sohn

Song

Leem

et al. 2004

phys. stat. sol. (c)

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“…Our finding is different from those observed in AgM alloys (M = In, 15 Mg, 16 and Cu 23 ) contacts to p-GaN, where the annealinginduced ohmic mechanisms were related to a reduction in the SBH caused by the formation of inhomogeneous Schottky barriers at the contact/ p-GaN interface due to the presence of NiO nanoparticles. 24,25 It was also shown that the electrical properties of the Ag-based samples improved with increasing Ni content (Fig. 1).…”

Section: High) It Is Noted That the Contrast Of Gan Inmentioning

confidence: 81%

Improved Light Output of GaN-Based Light-Emitting Diodes by Using AgNi Reflective Contacts

Jung

Lee

Song

et al. 2011

Journal of Elec Materi

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We investigated the light output power of blue light-emitting diodes (LEDs) fabricated with AgNi contacts as a function of the Ni content. Annealing the AgNi contacts at 400°C in air significantly improved their electrical characteristics. The AgNi samples with 10.0 wt.% Ni showed reflectance of 80.9% at 460 nm, whereas the Ag-only contacts gave 71.1%. After annealing at 400°C, the AgNi contacts exhibited better thermal stability than did the Ag-only contacts. Their current-voltage relationships showed that blue LEDs fabricated with Ag-only contacts gave a forward voltage of 3.33 V at 20 mA, whereas those fabricated with AgNi contacts with 10.0 wt.% Ni produced 3.03 V. LEDs fabricated with the AgNi contacts exhibited output power higher by 5.9% to 19.1% than those with Ag-only contacts. Based on scanning electron microscopy and x-ray photoemission spectroscopy results, the improved thermal and electrical behaviors are described and discussed.

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“…As an example, dual-metal-pinch rectifiers formed by micrometric stripes alternating low and high barrier height metals (Ti/Ni 2 Si) can allow to combine the advantages of the Ti (Φ B 1.2 eV) under forward bias and of the Ni 2 Si (Φ B 1.6 eV) under reverse bias [22]. Furthermore, also new nanoscale approaches for the manufacturing of Schottky contacts to SiC with lower barrier have been proposed, involving the formation of Au nanoparticles/SiC interfaces, whose electrical properties (i.e., the barrier height) critically depend on the size of the nanoparticles [67,68].…”

Section: Introductionmentioning

confidence: 99%

Nanoscale transport properties at silicon carbide interfaces

Roccaforte¹,

Giannazzo²,

Raineri³

2010

J. Phys. D: Appl. Phys.

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Abstract. Wide band gap semiconductors promise devices with performances not achievable using silicon technology. Among them, Silicon Carbide (SiC) is considered the top-notch material for a new generation of power electronic devices, ensuring the improved energy efficiency requested in the modern society. In spite of the significant progresses achieved in the last decade in the material quality, there are still several scientific open issues related to the basic transport properties at SiC interfaces and ion-doped regions that can affect the devices performances, keeping them still far from their theoretical limits. Hence, significant efforts in fundamental research at nanoscale have become mandatory to better understand the carrier transport phenomena, both at surfaces and interfaces. In this paper, the most recent experiences on nanoscale transport properties will be addressed, reviewing the relevant key points for the basic devices building blocks. The selected topics include the major concerns related to the electronic transport in metal/SiC interfaces, to the carrier concentration and mobility in ion-doped regions, and to channel mobility in metal/oxide/SiC systems. Some aspects related to interfaces between different SiC polytypes are also presented. All these issues will be discussed considering the current status and the drawbacks of SiC devices.

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Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

Cited by 70 publications

References 15 publications

Nano‐dot addition effect on the electrical properties of Ni contacts to p‐type GaN

Nano‐dot addition effect on the electrical properties of Ni contacts to p‐type GaN

Improved Light Output of GaN-Based Light-Emitting Diodes by Using AgNi Reflective Contacts

Nanoscale transport properties at silicon carbide interfaces

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