Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots

Garro, N.; Cros, A.; Budagosky, J. A.; Cantarero, A.; Vinattieri, A.; Gurioli, Massimo; Founta, S.; Mariette, H.; Daudin, B.

doi:10.1063/1.1977210

Cited by 36 publications

(36 citation statements)

References 22 publications

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“…AFM images of the control surface QD plane show an average density of 1. Global luminescence properties of similar samples were reported elsewhere [6,7]. Figure 1 shows the continuous wave photoluminescence spectrum at 5 K of the unprocessed sample.…”

Section: Methodsmentioning

confidence: 91%

Optical properties of single non‐polar GaN quantum dots

Rol¹,

Gayral²,

Founta³

et al. 2006

Physica Status Solidi (b)

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We present a microphotoluminescence study of non polar GaN/AlN quantum dots (QDs) grown along the [1120] axis. Despite the high QD density, single exciton lines could be isolated on the high energy side of the spectral distribution of the QD array emission. Linewidths down to 0.5 meV are reported, which is one order of magnitude lower than previously reported linewidths for polar GaN/AlN QDs. This difference is attributed to the drastic reduction of the internal field in non-polar quantum dots. Temperature dependent measurements were performed up to 180 K.

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Section: Methodsmentioning

confidence: 91%

Optical properties of single non‐polar GaN quantum dots

Rol¹,

Gayral²,

Founta³

et al. 2006

Physica Status Solidi (b)

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“…The mean diameter and height of the GaN QDs are 20 nm and 3 nm, respectively. More details about the growth of this sample can be found elsewhere [7].…”

Section: Resultsmentioning

confidence: 99%

“…A second striking difference between Figs. 2(a) and (b) arises from the piezoelectric contribution to the potential induced by strain which has now opposite sign due to the differences in the strain distribution [7]. As a consequence, the total potential is considerably reduced.…”

Section: 2mentioning

confidence: 99%

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Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

Budagosky

Garro

Cros

et al. 2016

Materials Science in Semiconductor Processing

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The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predicts a substantial reduction of the internal electric field but a persisting quantum confined Stark effect, comparable to that of polar GaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking fault inside the quantum dot, which acts as zinc-blende inclusion into the wurtzite matrix, results in an additional 30% reduction of the internal electric field and gives a better account of the observed optical features.

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“…Following this approach, the growth of QDs on non-polar (1120) 6H-SiC has been recently reported [4]. The emission properties of the structures suggest a strong reduction of the internal electric field as compared to the one present in QDs grown along the [0001] direction [4,5]. Nevertheless, in these three dimensional heterostructures, in contrast to the situation found in "infinite" quantum wells and superlattices, an electric field is expected to be present along the in-plane [0001] direction.…”

Section: Introductionmentioning

confidence: 98%

Influence of strain in the reduction of the internal electric field in GaN/AlN quantum dots grown on a‐plane 6H‐SiC

Cros

Budagosky

García‐Cristóbal

et al. 2006

Physica Status Solidi (b)

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The strain state of stacks of GaN/AlN quantum dots (QDs) grown on (0001) and (1120) 6H-SiC has been investigated by means of Raman spectroscopy. Depending on the orientation of the wurtzite axis with respect to the growth direction it is found that the piezoelectric contribution to the electrostatic potential may either reinforce that arising from the spontaneous polarization or oppose it. The experimental results are compared with a theoretical model for the strain and polarization field in QDs of both orientations that allows the calculation of the electrostatic potential in the QDs. Both the experimental results and the theoretical model indicate that the internal electric field and electrostatic potential are strongly reduced in the QDs grown on (1120) 6H-SiC as compared to those grown along the wurtzite c-axis.

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Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots

Cited by 36 publications

References 22 publications

Optical properties of single non‐polar GaN quantum dots

Optical properties of single non‐polar GaN quantum dots

Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

Influence of strain in the reduction of the internal electric field in GaN/AlN quantum dots grown on a‐plane 6H‐SiC

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