Reduction of surface roughness of GaP on Si substrate using strained GaInP interlayer by MOCVD

Nishio, Rei; Tanabe, Satoru; Suzuki, Ryota; Nemoto, K.; Miyamoto, Tomoyuki

doi:10.1109/iciprm.2010.5516043

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) 2010

DOI: 10.1109/iciprm.2010.5516043

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Reduction of surface roughness of GaP on Si substrate using strained GaInP interlayer by MOCVD

Rei Nishio

Satoru Tanabe

Ryota Suzuki

et al.

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Reduction of surface roughness of GaP on Si substrate using strained GaInP interlayer by MOCVD

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References 2 publications

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