Reduction of resonancelike peak in direct modulation due to carrier diffusion in injection laser

Furuya, Kazuhito; Suematsu, Y.; Hong, Tchang-Hee

doi:10.1364/ao.17.001949

Cited by 88 publications

(22 citation statements)

References 6 publications

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“…Elimination of these reflections raises the measured peaks closer to the calculated values. Additional effects, such as material inhomogeneity (curve 4), increase diffusion damping, and gain saturation may also be applicable [43], [44].…”

Section: Resultsmentioning

confidence: 99%

1.3-µm BH laser performance at microwave frequencies

Hakki

Bosch

Lumish

et al. 1985

J. Lightwave Technol.

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We have studied the performance of In, -.cGa,As,P, -buried heterostructure (BH) 1.3-pm lasers in the microwave range. This study consisted of small-signal, large-signal, and digital pseudo-random word evaluation of these lasers. The small-signal study pointed out the impact of the oxide stripe capacitance on the laser response at microwave frequencies. The large-signal study uncovered basic'laser nonlinearities that affect the temporal response, spectral broadening, and wavelength chirp. Finally, digital pseudo-random word tests performed at 1.7 Gbit/s indicated that in spite of these inherent laser nonlinearities, the 1.3-pm BH lasers performed well enough to be considered as promising sources for gigabit optical communication systems.

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Section: Resultsmentioning

confidence: 99%

1.3-µm BH laser performance at microwave frequencies

Hakki

Bosch

Lumish

et al. 1985

J. Lightwave Technol.

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“…Luckily, the spatial dependence can be removed by making use of assumed mode profiles for the photon densities. 16,17 This yields more equations, but with the removal of the spatial dependencies, simulations can be performed several magnitudes faster.…”

Section: Vertical Cavity Surface-emitting Lasermentioning

confidence: 99%

Circuit-level simulation approach to analyze system-level behavior of VCSEL-based optical interconnects

et al. 2003

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In order to satisfy the increasing demand for interchip interconnect bandwidth, a number of current research projects are concentrating on the use of waveguided optical interconnect arrays to span PCB-range distances. To accelerate system design and technology development, CAD tools for the design and the simulation of the interconnects are indispensable. We are developing a design methodology for optical inter-chip interconnects, to produce a tool for assisting system designers on deciding on product and parameter options for the different interconnect building blocks. A mandatory first step in this methodology development concerns the investigation of the combined impact of individual product and parameter variations on system-level interconnect system properties. Accurately predicting some interconnect properties requires analog simulation of the full electrical-optical-electrical links. Detailed models for the link building blocks involving geometrical calculations are much too slow for this purpose. Circuit-level simulation tools, with appropriate model descriptions, are much more suitable. In this paper, we describe our framework for the joint simulation of the entire optical interconnect with a mixed analog/digital system. We discuss in detail a number of issues that are involved with the implementation of circuit-level simulation models in the analog modelling language Verilog-AMS, and show a link simulation example.

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“…But the photon and carrier density distributions in another transverse direction, the direction parallel to the direction of injection current, had been claimed without detailed studies to have even less gain saturation effect because the thickness of the laser active layer is much smaller than the width. In these previous works [1][2][3], the theoretical analysis were effectively simplified without detailed studies by confining all the photons to the laser active layer, and by reducing without detailed studies the two-transversedimensional photon and carrier density distributions to one-dimensional distributions in the direction perpendicular to the injection current direction. We find that there are three problems still worth studying:…”

Section: Introductionmentioning

confidence: 99%

Gain Saturation Effect of Photon and Carrier Density Transverse Distributions in a Semiconductor Injection Laser

Sun¹,

Menhart²,

Zhong³

et al. 1994

Journal of Optical Communications

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We derive more general photon and carrier density distributions along two transverse directions in a semiconductor injection laser, by considering the fact that the carrier density is reduced by lasing along the direction parallel to the direction of injection current and that the photons are not totally confined in the active layer. It is shown that the photon and carrier density distributions along the direction parallel to the injection current direction have negligible effect on gain saturation, not due to the small thickness of the active layer but due to the distribution pattern. It is also shown that the photon and carrier density distributions along the direction perpendicular to the injection current direction cause small gain saturation which agrees to the result of previous model obtained by confining all the photons to the active layer.

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Reduction of resonancelike peak in direct modulation due to carrier diffusion in injection laser

Cited by 88 publications

References 6 publications

1.3-µm BH laser performance at microwave frequencies

1.3-µm BH laser performance at microwave frequencies

Circuit-level simulation approach to analyze system-level behavior of VCSEL-based optical interconnects

Gain Saturation Effect of Photon and Carrier Density Transverse Distributions in a Semiconductor Injection Laser

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