Reduction of noise in polysilicon emitter bipolar transistors

Siabi-Shahrivar, N.; Redman-White, W.; Ashburn, P.; Kemhadjian, H.A.

doi:10.1016/0038-1101(94)00126-z

Cited by 35 publications

(11 citation statements)

References 29 publications

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“…are lower than those of nonfluorinated devices. This improvement in I B due to the reduced nonideal base current component was reported for a larger number of samples in [12], [13] than studied here, and was attributed to suppression of recombination in the BE junction depletion regions at the oxide/silicon interface [9]- [14]. This suppression of IB by fluorine incorporation leads to improved gain, as shown in Fig.…”

Section: Device and Experimental Detailssupporting

confidence: 48%

“…The devices studied in this paper are self-aligned NPN BJTs with polysilicon emitters, fabricated in a simple conventional procedure [9], [12], [13]. The base and low-doped emitter (LDE) were produced by implanting boron and phosphorus, respectively, into (100) Czochralski n-on-n + epitaxial silicon wafers through an 80 nm screen oxide formed by a thermal oxidation in dry O2 at 1100 C. The phosphorus was implanted through an emitter window (EW) in photoresist.…”

Section: Device and Experimental Detailsmentioning

confidence: 99%

“…Recent interest in the impact of fluorine in silicon-based transistors has been mainly focused on two related beneficial effects of fluorine implantation into the polysilicon emitters [9]- [14]: 1) enhancement in break-up of the interfacial oxide layer at a lower temperature; and 2) suppression of recombination in the BE junction depletion regions through passivation of surface states at the oxide/silicon interface. It is the second effect that prompted us to investigate whether fluorination leads to improved resistance to hot-carrier stressing, or whether the initial improvement is lost.…”

mentioning

confidence: 99%

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Hot-carrier stressing of NPN polysilicon emitter bipolar transistors incorporating fluorine

Sheng

McKinnon

McAlister

et al. 2003

IEEE Trans. Electron Devices

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Abstract-The effects of fluorine on the hot-carrier induced degradation in low-thermal-budget polysilicon-emitter NPN bipolar transistors have been examined. Forward Gummel plots, base-emitter (BE) diode characteristics, and stress currents were measured during reverse BE bias stress. Fluorinated devices behave similarly under stress to nonfluorinated devices retaining the initial improvement observed in the forward-bias base current, which is due to suppression of recombination in the BE junction depletion regions at the oxide/silicon interface. The benefits of fluorination, and particularly the reduction in base current in fluorinated devices, appear to be robust-that is, there is no evidence that the defects passivated by fluorine are reactivated during stressing, or that fluorination introduces additional defects that are activated under stressing.

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Section: Device and Experimental Detailssupporting

confidence: 48%

Section: Device and Experimental Detailsmentioning

confidence: 99%

mentioning

confidence: 99%

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Hot-carrier stressing of NPN polysilicon emitter bipolar transistors incorporating fluorine

Sheng

McKinnon

McAlister

et al. 2003

IEEE Trans. Electron Devices

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“…The increase in noise level as the dimensions of BJTs shrink has already been reported, as mentioned above. 5,12,13,[20][21][22] Figures 4 and 5 show, respectively, the products P E ϫ S Ib (I b ) and A E ϫ S Ib (I b ) formed from the data of Fig. 3.…”

Section: Resultsmentioning

confidence: 99%

Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors

Llinares¹,

Céli²,

Roux-dit-Buisson³

et al. 1997

Journal of Applied Physics

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“…This means that the fluctuations of the emitter series resistance manifest themselves in the input noise voltage of such devices. The most probable source of these fluctuations is the resistance of the interfacial oxide layer [17]- [20]. That is, we can write , where is the spectral density of fluctuations of this resistance.…”

Section: A Input Noise Voltagementioning

confidence: 99%

The influence of BF/sub 2/ and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base

Lukyanchikova

Garbar

Petrichuk

et al. 2001

IEEE Trans. Electron Devices

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A study is made of 1 noise in SiGe heterojunction bipolar transistors (HBTs) fabricated using selective growth (SEG) of the Si collector and nonselective growth (NSEG) of the SiGe base and Si emitter cap. The transistors incorporate a self-aligned link base formed by BF 2 implantation into the field oxide below the p + polysilicon extrinsic base. The influence of this BF 2 implant on the 1 noise is compared with that of a F implant into the polysilicon emitter. Increased base current noise S IB and base current are seen in transistors annealed at 975 C, compared with transistors annealed at 950 or 900 C. At a constant collector current, both the BF 2 and F implants reduce S IB , whereas at a constant base current, only the BF 2 implant reduces S IB. This result indicates that the BF 2 implant decreases the intensity of the base current noise source whereas the F implant decreases the base current. The proposed explanation for the increased 1 noise is degradation of the surface oxide by viscous flow at 975 C under the influence of stress introduced during selective Si epitaxy. The influence of the BF 2 implant on the noise is explained by the relief of the stress and hence the prevention of viscous oxide flow.

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Reduction of noise in polysilicon emitter bipolar transistors

Cited by 35 publications

References 29 publications

Hot-carrier stressing of NPN polysilicon emitter bipolar transistors incorporating fluorine

Hot-carrier stressing of NPN polysilicon emitter bipolar transistors incorporating fluorine

Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors

The influence of BF/sub 2/ and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base

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