“…While the majority of scientific studies of LSFL on dielectric materials are based on punctual structures [12,15,27,28], i.e., LSFL are generated on a single spot only, for industrial applications, the generation of one-and two-dimensional LSFL is mandatory by scanning the laser. For metals [1][2][3][4]14,29,30] and semiconductors [5,[31][32][33], this has been shown in several publications because of the convenience in generating LSFL on these materials with free charged carriers ( < 0). For dielectric materials, e.g., fused silica, the authors recently have shown the transfer from punctual laser irradiation into the dynamic range, i.e., moving the laser spot over the sample [16].…”