Reduction of elastic strains in directly-bonded silicon structures

Argunova, T. S.; Vitman, R. F.; Grekhov, I. V.; Kostina, L. S.; Kudryavtseva, Tamara V.; Gutkin, M. Yu.; Shturbin, A. V.; Härtwig, J.; Ohler, M.; Kim, E. D.; Kim, S. Ch.

doi:10.1134/1.1131099

Cited by 5 publications

(1 citation statement)

References 18 publications

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“…In the X-ray topographs of the SOI layer of the bonded SOI wafers, wrinkled patterns have been observed, which were interpreted due to the lattice undulation existing in the SOI layers. [4][5][6][7][8][9] Matsui et al showed using a synchrotron X-ray microbeam technique that the lattice planes of the bonded SOI layer were locally inclined without any change in lattice spacing, the inclination angle reached more than 16 arcsec and the spatial interval of the undulation ranged from 10 to 100 mm. 10) Recently, we have carried out a systematic research for the lattice undulation of bonded SOI wafers by monochromatic X-ray topography using a synchrotron radiation source [11][12][13][14] and showed the existence of a similar lattice undulation of the SOI layer even in the state-of-the-art commercial bonded SOIs manufactured by the hydrogendelamination-induced splitting and the epitaxial-layer-transfer processes.…”

Section: Introductionmentioning

confidence: 99%

White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers

Fukuda

Yoshida

Shimura

et al. 2006

jjap

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The lattice undulation of a silicon-on-insulator (SOI) layer in bonded SOI wafers was observed by synchrotron white and monochromatic X-ray topographies. Pattern formation for white X-ray topography was discussed using the geometric relation among the Bragg streak and diffracted X-rays in reciprocal space. The diffraction images in white X-ray topographs were simulated using the angular distributions of the lattice inclination in SOI layers obtained by the analysis of monochromatic Xray topographs. The results of this simulation were in very good agreement with observations including the dependences on camera distance and SOI layer thickness, indicating that the contrast is mainly formed by the divergence/convergence effect of the diffracted X-rays.

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Section: Introductionmentioning

confidence: 99%

White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers

Fukuda

Yoshida

Shimura

et al. 2006

jjap

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The mechanism of contact-resistance formation on lapped n-Si surfaces

et al. 2013

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Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers

Fukuda¹,

Yoshida²,

Shimura³

et al. 2004

Jpn. J. Appl. Phys.

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In this paper, the coefficient inverse problem for the elasticity system for horizontally stratified media is considered. The different numerical experiments for solving this problem are presented. The numerical experiments with the residual functional allow us to formulate the minimization strategy for solving the inverse problem in the frequency domain. The pressure and shear velocities in the member of thin layers are numerically reconstructed by means of this strategy. IntroductionAt present there are many theoretical works devoted to one-dimensional and multidimensional inverse problems for the elasticity system, for example, [1][2][3][4][5]. We refer the reader to the theoretical results in these works and the references therein: the existence, uniqueness and conditional stability for solutions of inverse problems for the elasticity system were proved. These works are known to use combined sources together, such as combinations of the vertical impact together with an instantaneous centre of rotation [1], slopping impacts [2-4] and directed explosion [5]. This choice of sources makes it possible to decompose the elasticity system and hence the original inverse problems may be reduced to a sequence of simple inverse problems for scalar hyperbolic equations. Numerical solutions of inverse problems for scalar equations are well investigated.The reconstruction inverse problem of the medium parameters with sources which can excite different types of waves in the medium is considered in applied geophysics now. Multiwave methods in geophysics were first proposed in Russia [6-12] and now have world wide application, for example, [13][14][15][16][17]. Many papers on multiwave methods are reported in the EAGE Conference and Exhibition, for example, [18][19][20] and others.A usual source in seismic practice is explosion. This source is described mathematically as the centre of compression. This mathematical model for the source gives no decomposition

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Reduction of elastic strains in directly-bonded silicon structures

Cited by 5 publications

References 18 publications

White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers

White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers

The mechanism of contact-resistance formation on lapped n-Si surfaces

Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers

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