Reduction of charge transfer region using graphene nano-ribbon geometry for improved complementary FET performance at sub-micron channel length

Hollander, Matthew J.; Shukla, Nikhil; Agrawal, Nidhi; Madan, H.; Robinson, Joshua A.; Datta, Suman

doi:10.1109/drc.2013.6633838

Cited by 2 publications

(2 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Gra posed sheets and imperfections are highly nature, thus making graphene a highly reac bon [3]. Mathew et al [4] have observed Nano-ribbon geometries on graphene de leading to improved device performance an FET performance at submicron channel leng Modelling of Nano-scale GNRFET dev tools shown in " Fig. 1" offers a better und device response to new process tools emplo rication technology.…”

Section: Introductionmentioning

confidence: 99%

Modelling of a sensor for gas adsorption on P and Ga doped GNRFET

Sumukh

Moudgil

Swaminathan

2015

2015 International Symposium on Next-Generation Electronics (ISNE)

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Modelling of a sensor for gas adsorption on P and Ga doped GNRFET

Sumukh

Moudgil

Swaminathan

2015

2015 International Symposium on Next-Generation Electronics (ISNE)

View full text Add to dashboard Cite

show abstract

“…Graphene edges, exposed sheets and imperfections are highly functionalized in nature, thus making graphene a highly reacting form of carbon [3]. Mathew et al [4] have observed that the effect of nano-ribbon geometries on graphene device performance and its effect on reducing the negative impact of Dirac point shift due to charge transfer into the graphene channel from the metal graphene contact leads to improved device 978-1-4799-6085-9/15/$31.00 ©2015 IEEE performance and a balanced n, p FET performance at submicron channel lengths.…”

mentioning

confidence: 99%

Modelling of a nano-sensor for N<inf>2</inf>O gas adsorption on Gallium and Phosphorus doped GNRFET

Moudgil

Swaminathan

2015

2015 IEEE International Conference on Electrical, Computer and Communication Technologies (ICECCT)

View full text Add to dashboard Cite

This paper focuses on the modelling of a nano -GNRFET for gas sensing using Sentaurus TCAD. Gas sensing is done by diffusing a gas over the surface of the Graphene Nano Ribbon (GNR) layer. Doped GNR is placed over the gate separated by a thin layer of insulator. A V ASP structure of a zigzag GNR (ZGNR) doped separately with Gallium Phosphorus as dopants has been first modelled for observing their structure and atomic spacings in free space. Results of the TCAD analysis indicate that the adsorbance of NzO by the doped GNR layer is reflected by a sizeable change in the N-well potential, making these structures promising candidates for nano scale sensing of NzO.The width of the Graphene nano ribbon is 90nm x 500nm. 28nm fabrication technology is used for modelling the GNRFET. Doped GNR generally has good conductivity which yields in better gas sensing.

show abstract

Reduction of charge transfer region using graphene nano-ribbon geometry for improved complementary FET performance at sub-micron channel length

Cited by 2 publications

References 1 publication

Modelling of a sensor for gas adsorption on P and Ga doped GNRFET

Modelling of a sensor for gas adsorption on P and Ga doped GNRFET

Modelling of a nano-sensor for N<inf>2</inf>O gas adsorption on Gallium and Phosphorus doped GNRFET

Contact Info

Product

Resources

About