Reduction of carrier concentrations of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.gif" display="inline" overflow="scroll"><mml:mi>β</mml:mi></mml:math>-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si2.gif" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mstyle mathvariant="normal"><mml:mi>FeSi</mml:mi></mml:mstyle></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math> films by atomic hydrogen-assisted molecular beam epitaxy

Akutsu, Keiichi; Suzuno, Mitsushi; Kawakami, Hajime; Suemasu, Takashi

doi:10.1016/j.phpro.2011.01.028

Physics Procedia

2011

DOI: 10.1016/j.phpro.2011.01.028

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Reduction of carrier concentrations of β-FeSi2 films by atomic hydrogen-assisted molecular beam epitaxy

Keiichi Akutsu

Mitsushi Suzuno

Hajime Kawakami

et al.

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Reduction of carrier concentrations of β-FeSi2 films by atomic hydrogen-assisted molecular beam epitaxy

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References 12 publications

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