Reduction of byproduct particle size using low-pressure plasmas generated by a cylindrical-shaped electrode

Hur, Min; Lee, J.O.; Yoo, H.A.; Kang, Woo Seok; Song, Young Hoon; Kim, D.G.; Lee, S.Y.

doi:10.1016/j.vacuum.2012.04.002

Cited by 4 publications

(5 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Several authors have already reported that the size and quantity of residual particles generated during the cleaning process can be significantly reduced by using low‐pressure plasma . Therefore, we explain this mechanism only briefly.…”

Section: Resultsmentioning

confidence: 93%

“…It became narrower and then uniform, as the distance from the interface increased. This structure has been adopted for obtaining spatially uniform plasmas over a wide range of pressure values . The inner and outer diameters of the quartz tube were 140 and 146 mm, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…It has been already verified in many research works that low‐pressure plasmas can fully abate CF 4 , the most difficult greenhouse gas to destroy . Several authors also showed that low‐pressure plasmas enable the amount of byproduct particles to be greatly reduced before the vacuum pump stage . Recently, low‐pressure plasma after‐treatment technology has become commercialized in a few processes in which atmospheric pressure after‐treatment systems are difficult to apply, such as abatements of CF 4 (Intel) and ALD precursor (Samsung Electronics).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Low‐Pressure Plasma After‐Treatment of Pollutants Emitted During Semiconductor Manufacturing

Hur

Lee

Kang

et al. 2015

Plasma Processes & Polymers

View full text Add to dashboard Cite

Feasibility tests of abating and stabilizing pollutants emitted during semiconductor manufacturing are performed by using a plasma reactor placed before a vacuum pump. Abatement characteristics of N2O, CF4, CHF3, NF3, C3H6, and TEMAZ are investigated by analyzing the data obtained by using Fourier transform infrared spectroscopy and gas chromatography. The size of byproduct particles is identified by using a particle sampler. Analysis is focused on the role of reactant gases (O2 or H2O) during abatement. Finally, the applicability of low‐pressure plasma after‐treatment technology is discussed from the environmental and economic points of view.

show abstract

Section: Resultsmentioning

confidence: 93%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Low‐Pressure Plasma After‐Treatment of Pollutants Emitted During Semiconductor Manufacturing

Hur

Lee

Kang

et al. 2015

Plasma Processes & Polymers

View full text Add to dashboard Cite

show abstract

“…In previous research works [4][5][6][7][8][9][10][11], it was verified that lowpressure plasmas can be used to effectively abate F-gases. Several authors also demonstrated that low-pressure plasmas significantly reduce the size and quantity of byproduct particles before the vacuum pump stage [12][13][14]. These results indicate that low-pressure plasma technology can bring about the eco-friendly semiconductor processing together with an extension in the vacuum pump lifespan.…”

Section: Introductionmentioning

confidence: 92%

Abatement characteristics of N₂O in low-pressure plasma reactor

Hur¹,

Lee²,

Lee³

et al. 2015

Plasma Sources Sci. Technol.

View full text Add to dashboard Cite

The abatement characteristics of N 2 O were investigated in a plasma reactor positioned in front of a vacuum pump. Fourier transform infrared (FTIR) spectroscopy was used for evaluating the destruction and removal efficiency (DRE) and the identification of byproducts. The concentration of NO x (NO and NO 2 ) was quantified by using an NO x analyzer. The DRE of N 2 O was enhanced by increasing the power or decreasing the N 2 O flow rate. A higher pressure yields a higher DRE of N 2 O and a lower concentration of NO x in the destroyed N 2 O. For understanding this phenomenon, the discharge characteristics were analyzed by using optical emission spectroscopy (OES). The spatial distribution of emission spectra from the discharge in a mixture of N 2 O and Ar gases was measured by varying the pressure. The mechanisms underlying the pressure effect on the N 2 O DRE and NO x concentration are discussed in terms of the electron density and the concentration of O radicals.

show abstract

“…Semiconductor by-products depend on the type of process gas and condition under which the chemical reactions can occur. In the ALD process, the unreacted process gas is deposited inside the vacuum pump and causes pump failure [29]. TiN thin film ALD process using NH 3 , N 2 , and TiCl 4 gases generate TiO 2 and NH 4 Cl by a chemical bond.…”

Section: Subject Matter 21 Equipment Degradation Mechanismmentioning

confidence: 99%

Industrial Internet of Things for Condition Monitoring and Diagnosis of Dry Vacuum Pumps in Atomic Layer Deposition Equipment

2022

View full text Add to dashboard Cite

In the modern semiconductor industry, defective products occur with unexpected small variables due to process miniaturization. Managing the condition of each part is an effective way of preventing unexpected errors. The industrial internet of things (IIoT) environment, which can monitor and analyze the performance degradation of parts that affect process results, enables advanced process yield management. This paper introduces the IIoT concept-based data monitoring and diagnostic system construction results. The process of pump vibration data acquisition is explained to evaluate the effectiveness of this system. The target process is deposition. The purpose of the system is to detect degradation of pumps due to by-products of the atomic layer deposition (ALD) process. The system consists of three areas: a data acquisition unit using six vibration sensors, a Web access-based monitoring unit that can monitor vibration data, and an Azure platform that searches for outliers in vibration data.

show abstract

Reduction of byproduct particle size using low-pressure plasmas generated by a cylindrical-shaped electrode

Cited by 4 publications

References 13 publications

Low‐Pressure Plasma After‐Treatment of Pollutants Emitted During Semiconductor Manufacturing

Low‐Pressure Plasma After‐Treatment of Pollutants Emitted During Semiconductor Manufacturing

Abatement characteristics of N₂O in low-pressure plasma reactor

Industrial Internet of Things for Condition Monitoring and Diagnosis of Dry Vacuum Pumps in Atomic Layer Deposition Equipment

Contact Info

Product

Resources

About

Reduction of byproduct particle size using low-pressure plasmas generated by a cylindrical-shaped electrode

Cited by 4 publications

References 13 publications

Low‐Pressure Plasma After‐Treatment of Pollutants Emitted During Semiconductor Manufacturing

Low‐Pressure Plasma After‐Treatment of Pollutants Emitted During Semiconductor Manufacturing

Abatement characteristics of N2O in low-pressure plasma reactor

Industrial Internet of Things for Condition Monitoring and Diagnosis of Dry Vacuum Pumps in Atomic Layer Deposition Equipment

Contact Info

Product

Resources

About

Abatement characteristics of N₂O in low-pressure plasma reactor