Reduction of buffer‐related current collapse in field‐plate AlGaN/GaN HEMTs

Nakajima, Akira; Itagaki, Kimio; Horio, K.

doi:10.1002/pssc.200880756

Cited by 3 publications

(3 citation statements)

References 14 publications

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“…During the simulation, the Fermi-Dirac statistics model, parallel field mobility model, and Shockley-Read-Hall recombination model were considered, while the surface state effect was ignored considering their limited impact on the simulation results. The device breakdown mechanism was generated by the impact ionization process and the impact ionization mechanism was modeled as α 0 exp(−E c /E), where α 0 = 2.9 × 10 8 cm −1 and E c = 3.4 × 10 7 V cm −1 [17,18].…”

Section: Device Structure and Simulation Modelmentioning

confidence: 99%

TCAD study of high breakdown voltage AlGaN/GaN HEMTs with embedded passivation layer

Fan

et al. 2022

J. Phys. D: Appl. Phys.

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The breakdown characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) are one of the most important parameters for practical applications when used as power devices. In this study, the relationship between the relative permittivity of the passivation layers and the breakdown voltages in the off state was investigated in detail using TCAD simulations. An embedded double-passivation layer was proposed to enhance the breakdown voltage of the devices. This device structure was realized using an additional step of etching and opening holes on the edge of the gate metal, followed by the deposition of the embedded passivation films. The extracted electric field shows that this embedded passivation layer not only can improve the breakdown characteristics of the device like using a single high k passivation film but also presents as the function of the “Metal Field Plate”, additionally resulting in the enlarged breakdown voltage. Further theoretical simulations indicated that the greater the difference between the dielectric constants of the high/low passivation materials, the higher the breakdown voltage can be obtained.

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Section: Device Structure and Simulation Modelmentioning

confidence: 99%

TCAD study of high breakdown voltage AlGaN/GaN HEMTs with embedded passivation layer

Fan

et al. 2022

J. Phys. D: Appl. Phys.

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“…The degradation results from charge storage by traps either on the surface or in the bulk. Surface trapping effects can be mitigated by the use of field plates [14] to weaken the electric field at the gate edge of the drain side, and passivation technique [15] to reduce the density of surface states. Tang et al utilized a photonic-ohmic drain structure to generate photons, pumping electrons from deep surface traps [16].…”

Section: Introductionmentioning

confidence: 99%

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

et al. 2021

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Carbon doping in the buffer of AlGaN/GaN high-electron-mobility transistors (HEMTs) leads to the notorious current collapse phenomenon. In this paper, an HEMT structure with a source-connected p-GaN (SCPG) embedded in the carbon-doped semi-insulating buffer is proposed to suppress the buffer-induced current collapse effect. Two-dimensional transient simulation was carried out to show the successful suppression of buffer-induced current collapse in the SCPG-HEMTs compared with conventional HEMTs. The mechanism of suppressing dynamic on-resistance degradation by ejecting holes from the SCPG into the high resistive buffer layer after off-state stress is illustrated based on energy band diagrams. This paper contributes an innovative device structure to potentially solve the buffer-induced degradation of the dynamic on-resistance in GaN power devices.

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“…Also, we have studied dependence of current collapse on the impurity densities in the buffer layer and on an off-state drain voltage. Additionally, we have analyzed effects of introducing a field plate on buffer-related lag phenomena and current collapse (Nakajima et al, 2009). In Section 2, we describe physical models used here, such as analyzed device structures, traps in the buffer layer, and basic equations for the device analysis.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Parasitic Effects in AIGaN/GaN HEMTs

Horio¹

2010

Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems

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This book is planned to publish with an objective to provide a state-of-the-art reference book in the areas of advanced microwave, MM-Wave and THz devices, antennas and systemtechnologies for microwave communication engineers, Scientists and post-graduate students of electrical and electronics engineering, applied physicists. This reference book is a collection of 30 Chapters characterized in 3 parts: Advanced Microwave and MM-wave devices, integrated microwave and MM-wave circuits and Antennas and advanced microwave computer techniques, focusing on simulation, theories and applications. This book provides a comprehensive overview of the components and devices used in microwave and MM-Wave circuits, including microwave transmission lines, resonators, filters, ferrite devices, solid state devices, transistor oscillators and amplifiers, directional couplers, microstripeline components, microwave detectors, mixers, converters and harmonic generators, and microwave solid-state switches, phase shifters and attenuators. Several applications area also discusses here, like consumer, industrial, biomedical, and chemical applications of microwave technology. It also covers microwave instrumentation and measurement, thermodynamics, and applications in navigation and radio communication. How to referenceIn order to correctly reference this scholarly work, feel free to copy and paste the following: 978-953-307-031-5, InTech, Available from: http://www.intechopen.com/books/advanced-microwave-andmillimeter-wave-technologies-semiconductor-devices-circuits-and-systems/analysis-of-parasitic-effects-inaigan-gan-hemts

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Reduction of buffer‐related current collapse in field‐plate AlGaN/GaN HEMTs

Cited by 3 publications

References 14 publications

TCAD study of high breakdown voltage AlGaN/GaN HEMTs with embedded passivation layer

TCAD study of high breakdown voltage AlGaN/GaN HEMTs with embedded passivation layer

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

Analysis of Parasitic Effects in AIGaN/GaN HEMTs

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