Chemical reactions of LaMO3(M=Ni, Co, Mn) and ZrO2 have been analyzed using chemical potential diagrams for the La-Zr-M-O systems under a condition of P(O2)= 1 bar. A log{a(M)/a(Zr)} vs. log{a(La)/a(Zr)} plot is appropriate for representing diffusion paths, because the layered arrangement of the reaction zone corresponds well to the geometrical configuration of stability polygons of reactants (LaMO~ and ZrO2) and products (La2Zr2OT, MO, La2ZrMO6, etc.). A complicated arrangement including a ternary perovskite phase, La2ZrNiO6, observed in the La2NiO~SZ couple can be represented by ABSTRACT Process control strategies have been developed for reactive ion etching of silicon and silicon dioxide in CF4/O2 and CF4/H2 plasmas. Four measured variables, four manipulated variables, and seven performance variables were considered for both gas mixtures. Relative gain array analysis and singular value decomposition were used to select manipulated/ process variable control loop pairings for feedback control and to evaluate potential difficulties in control system perform-