Reducing thermal resistance of high-power semiconductor diode lasers with coupled waveguides

Payusov, A. S.; Beckman, A. A.; Kornyshov, G. O.; Shernyakov, Yu. M.; Mintairov, S. A.; Kalyuzhnyy, N. A.; Kulagina, M. M.; Maximov, M. V.; Gordeev, N. Yu.

doi:10.1016/j.optlastec.2023.109479

Cited by 2 publications

(1 citation statement)

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“…Increasing the output power and PCE are everlasting goals in both research and practical applications. To address these objectives, extensive researches have been dedicated to epitaxial design [8][9][10][11][12][13], epitaxial growth, cavity surface treatment [14], catastrophic optical damage (COD) [15][16][17], and packaging optimization [1]. Key issues targeted in these studies include reducing threshold current [18,19], improving slope efficiency [19][20][21], reducing series resistance [18,22], reducing opening voltage [22], reducing chip thermal resistance [21], improving power thermal turnover at large current [22][23][24], and improving the damage threshold of the laser output facet [14,16].…”

Section: Introductionmentioning

confidence: 99%

Efficient power scaling of broad-area laser diodes from 915 to 1064 nm

Yang,

Liu,

Zhao

et al. 2024

High-Power Diode Laser Technology XXII

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Our primary goal is to significantly enhance the output power of broad-area laser diodes (LDs) for improved costeffectiveness of laser systems and broaden their applications in various fields. To achieve this, we implemented an epitaxial design with low internal optical loss and high internal efficiency in agreement with our simulations. We present comprehensive results of high-power single-emitter and bar LDs spanning wavelengths from 915 to 1064 nm. To demonstrate power scaling in single emitter LDs, we utilized waveguide widths from 100 to 500 µm, achieving a continuous-wave (CW) maximum output power of 74 W at 976 nm under room temperature conditions, limited by the heatsink temperature control. We also build fiber-coupled modules with single-emitters operating at 1.6 kW. Employing the same epitaxial structure in 1-cm wide laser bars, we demonstrated 976 nm laser bars operated at 100 A CW with 113 W output and a high efficiency of 72.9% at room temperature. Additionally, we achieved 500 W room-temperature CW laser bars at 940 nm. For long wavelength designs at 1064 nm, 500 W output was obtained in quasi-continuous-wave (QCW) operating laser bars. Our results represent significant advancements in obtaining high power and efficient LDs across a broad wavelength range and configuration.

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