Reducing the Short Channel Effect of Transistors and Reducing the Size of Analog Circuits

Wei, Zhaopeng; Jacquemod, G.; Leduc, Yves; Foucauld, Emeric de; Prouvee, J.; Blampey, B.

doi:10.1155/2019/4578501

Cited by 6 publications

(4 citation statements)

References 7 publications

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“…Tis P 3 O 5− 10 employed for the reduction of Ag + ion to form Ag °, and fnally several Ag °were aggregated during reduction reaction for the formation of Ag-NPs [103]. Tus, the size of the nanoscale particles was achieved through adjusting the concentrations of ion source, reducing agents, and period of reduction [104,105]. Te maximum absorption peak at 410 nm confrmed that highest Ag-NPs were yielded at 4 h reduction reaction.…”

Section: Discussionmentioning

confidence: 99%

Facile Synthesis and Application of Ag-NPs for Controlling Antibiotic-ResistantPseudomonas spp. and Bacillus spp. in a Poultry Farm Environment

Rahman

Rasid

Ali

et al. 2023

Journal of Nanotechnology

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This study synthesized silver nanoparticles (Ag-NPs) using silver nitrate (AgNO3) as the ion source and sodium tripolyphosphate (STPP) as reducing as well as capping agents. The synthesized Ag-NPs were confirmed initially using Ag-NPs specific λmax at 410 nm with UV-Vis spectrophotometry and homogenously distributed, 100–300 nm size, and round-shaped particles were realized through atomic force microscopy (AFM) and transmission electron microscopy (TEM) image analysis. The various reaction condition-based studies revealed 0.01 M AgNO3 yields maximum particle after 4 h reduction with 1% STPP. Bacillus spp. (n = 23/90) and Pseudomonas spp. (n = 26/90) were isolated from three different poultry farms for evaluating the antibacterial activity of Ag-NPs. Among the PCR confirmed isolates, 52% (12/23) Bacillus spp. were resistant to ten antibiotics and 65% (17/26) Pseudomonas spp. were resistant to eleven antibiotics. The representative resistant isolates were subjected to antibacterial evaluation of synthesized Ag-NPs following the well diffusion method, revealing the maximum sensitive zone of inhibition 19 ± 0.2 mm against Bacillus spp. and 17 ± 0.38 mm against Pseudomonas spp. The minimum inhibitory concentration (MIC) and minimum bacterial concentration (MBC) of Ag-NPs were 2.1 μg/ml and 8.4 μg/ml, respectively, for broad-spectrum application. Finally, the biocompatibility was determined by observing the viability of Ag-NP-treated BHK-21 cell through trypan blue-based exclusion assay revealing nonsignificant decreased of cell viability ≤2MIC doses. Thus, the synthesized Ag-NPs were proven as biocompatible and sensitive to both Gram-positive and Gram-negative bacteria of the poultry farm environmental samples.

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Section: Discussionmentioning

confidence: 99%

Facile Synthesis and Application of Ag-NPs for Controlling Antibiotic-ResistantPseudomonas spp. and Bacillus spp. in a Poultry Farm Environment

Rahman

Rasid

Ali

et al. 2023

Journal of Nanotechnology

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“…Our proposed novel solution involves dynamically biasing the back-gate of FDSOI transistors to counteract the short channel effect, even when V ds is not the same [6]. This approach can be applied to the basic current mirror depicted in Figure 6 by configuring the back-gates of FDSOI transistors, as shown in Figure 7.…”

Section: New Mirror Current Topology Using Fdsoi Technologymentioning

confidence: 99%

“…. ., longer transistors are required, especially for analog cells, as shown in Figure 1 [6]. To address these limitations while reducing the size of the transistors, several mainstream advanced technologies have emerged.…”

Section: Introductionmentioning

confidence: 99%

LC Tank Oscillator Based on New Negative Resistor in FDSOI Technology

Mao,

Charlon,

Leduc

et al. 2024

JLPEA

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Although Moore’s Law reaches its limits, it has never applied to analog and RF circuits. For example, due to the short channel effect (SCE), drain-induced barrier lowering (DIBL), and sub-threshold slope (SS)…, longer transistors are required to implement analog cells. From 22 nm CMOS technology and beyond, for reasons of variability, the channel of the transistors has no longer been doped. Two technologies then emerged: FinFET transistors for digital applications and UTBB FDSOI transistors, suitable for analog and mixed applications. In a previous paper, a new topology was proposed utilizing some advantages of the FDSOI technology. Thanks to this technology, a novel cross-coupled back-gate (BG) technique was implemented to improve analog and mixed signal cells in order to reduce the surface of the integrated circuit. This technique was applied to a current mirror to reduce the small channel effect and to provide high-output impedance. It was demonstrated that it is possible to overcompensate the SCE and DIBL effects and to create a negative output resistor. This paper presents a new LC tank oscillator based on this current mirror functioning as a negative resistor.

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“…In Figure 7, the drain current variation of FDSOI is shown for different thicknesses of gate oxide [18].…”

Section: Gate Oxide Thickness Variation Of Fdsoimentioning

confidence: 99%

Design and Performance Analysis of Partially Depleted and Fully Depleted Silicon on Insulator MOSFET

Shashwat¹,

Singh²,

Misra³

et al. 2022

J. Phys.: Conf. Ser.

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In this paper, Partially Depleted Silicon on Insulator (PDSOI) MOSFET and Fully Depleted Silicon on Insulator (FDSOI) MOSFET are designed, and the impact of n-type doping concentration, work function variation, gate oxide, and silicon layer thickness on the performance of the device is studied and analyzed. The floating body and associated kink effects present in a PDSOI device are also investigated in detail. In addition to this, comparisons are made between PDSOI and FDSOI MOSFET to analyze their performance for various device parameters. The threshold voltage rises with increasing Si surface thickness and source doping, according to the data found. The drain current increases as the N-type doping concentration develops in both PD and FDSOI MOSFETs, and conduction begins after a concentration of 3x1017 cm−3 for PD and 2x1017 cm−3 for FDSOI, before which conduction is not effective. For the same n-type doping concentration and gate work function, FDSOI has a higher drain current than PDSOI. FDSOI is better than PDSOI since it eliminates PDSOI’s defects and enhances its performance. The Silvaco Atlas-2D TCAD simulator is used to simulate the device using conventional architecture and models.

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Reducing the Short Channel Effect of Transistors and Reducing the Size of Analog Circuits

Cited by 6 publications

References 7 publications

Facile Synthesis and Application of Ag-NPs for Controlling Antibiotic-ResistantPseudomonas spp. and Bacillus spp. in a Poultry Farm Environment

Facile Synthesis and Application of Ag-NPs for Controlling Antibiotic-ResistantPseudomonas spp. and Bacillus spp. in a Poultry Farm Environment

LC Tank Oscillator Based on New Negative Resistor in FDSOI Technology

Design and Performance Analysis of Partially Depleted and Fully Depleted Silicon on Insulator MOSFET

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