Reducing pulsewidth broadening in L-band EDFAs by use of a new L-band EDF

Yu, Jianjun; Jeppesen, P.; Pálsdóttir, B.; Knudsen, S.N.

doi:10.1109/68.930404

Cited by 5 publications

(2 citation statements)

References 8 publications

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“…[14][15][16][17] . Meanwhile, the methods of pulsed modulation, such as Gain-switched, [18][19][20] active Q-switched, 21) passively Q-switched [22][23][24] and mode locked [25][26][27][28] were also investigated in the DWP system. However, the states of the 976 nm pump source reported in the literature were all continuous wave (CW).…”

Section: Introductionmentioning

confidence: 99%

Pulse light manipulate output state of 3.6 μm fluoride fiber laser in DWP system

Zhang¹,

Tong²,

Cai³

et al. 2022

Jpn. J. Appl. Phys.

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Strong driving with light offers the potential to manipulate the properties of fluoride fiber on absorbed characteristics. A 3.6 µm continuous wave (CW) fiber laser pumped by the 1973 nm CW fiber laser and the 976 nm pulsed diode sources was demonstrated in dual-wavelength pumping system. The output state could be changed from pulse to CW by controlling the repetition frequency and pumping power of the 976 nm pulsed pump source. By optimizing the pumping parameter, a maximum output power of 1.2 W was achieved for the 3.6 µm CW fiber laser. The demonstrated method shows a new solution for controlling output state of 3.6 µm fiber lasers, which can be used to achieve high power CW laser output. And it would be helpful for better understanding the interaction process of particle transition in dual-wavelength pumping system.

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Section: Introductionmentioning

confidence: 99%

Pulse light manipulate output state of 3.6 μm fluoride fiber laser in DWP system

Zhang¹,

Tong²,

Cai³

et al. 2022

Jpn. J. Appl. Phys.

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“…Rare earth-doped PCF was found many of these novel features. Currently, it became a hotspot, many study focused on rare earth-doped PCF [6][7][8][9][10]. It was applied in fiber laser and amplifier as active medium.…”

Section: Introductionmentioning

confidence: 99%

Erbium-doped photonic crystal fiber laser

Yang

Ruan

et al. 2009

Photonics and Optoelectronics Meetings (POEM) 2009: Fiber Optic Communication and Sensors

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We have demonstrated a low threshold all fiber laser based on a 9.68 m-long small core Erbium doped photonic crystal fiber (PCF) and also presented results from two separate device experiments. The threshold and maximum output power of the laser are 6.72 mW and 82.6 mW, respectively. Fiber loop mirrors is used as resonator mirrors. The overall system is all-fibered and with low threshold. The PCF we used as gain medium with 9.68 m long, 3.34 μm mode diameter, 0.143 numerical aperture, 1000 ppm doped concentration, 545 dB/km transmission attenuation coefficient to 1310 nm laser. A single-mode diode laser, centered at 980 nm, was used as pump source and the maximum power was 400 mW.

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High-pulse-energy III-V-on-silicon-nitride mode-locked laser

et al. 2021

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Mode-locked lasers find their use in a large number of applications, for instance, in spectroscopic sensing, distance measurements, and optical communication. To enable widespread use of mode-locked lasers, their on-chip integration is desired. In recent years, there have been multiple demonstrations of monolithic III-V and heterogeneous III-V-on-silicon mode-locked lasers. However, the pulse energy, noise performance, and stability of these mode-locked lasers are limited by the relatively high linear and nonlinear waveguide loss, and the high temperature sensitivity of said platforms. Here, we demonstrate a heterogeneous III-V-on-silicon-nitride (III-V-on-SiN) electrically pumped mode-locked laser. SiN’s low waveguide loss, negligible two-photon absorption at telecom wavelengths, and small thermo-optic coefficient enable low-noise mode-locked lasers with high pulse energies and excellent temperature stability. Our mode-locked laser emits at a wavelength of 1.6 μm, has a pulse repetition rate of 3 GHz, a high on-chip pulse energy of ≈2 pJ, a narrow RF linewidth of 400 Hz, and an optical linewidth <1 MHz. The SiN photonic circuits are fabricated on 200 mm silicon wafers in a CMOS pilot line and include an amorphous silicon waveguide layer for efficient coupling from the SiN to the III-V waveguide. The III-V integration is done by micro-transfer-printing, a technique that enables the transfer of thin-film devices in a massively parallel manner on a wafer scale.

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Reducing pulsewidth broadening in L-band EDFAs by use of a new L-band EDF

Cited by 5 publications

References 8 publications

Pulse light manipulate output state of 3.6 μm fluoride fiber laser in DWP system

Pulse light manipulate output state of 3.6 μm fluoride fiber laser in DWP system

Erbium-doped photonic crystal fiber laser

High-pulse-energy III-V-on-silicon-nitride mode-locked laser

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