Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface

Sun, Huabin; Yin, Yao; Wang, Qijing; Qian, Jun; Wang, Yu; Tsukagoshi, Kazuhito; Wang, Xizhang; Hu, Zheng; Pan, Lijia; Zheng, Yi; Shi, Yi; Li, Yun

doi:10.1063/1.4928534

Cited by 23 publications

(16 citation statements)

References 31 publications

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“…Thus, the differences in the V‐poled and the textured poled devices arise from an improvement in the dielectric layer itself. It is not surprising that the contact resistance of TIPS‐pentacene FETs here is higher with PVDF‐TrFE compared with other dielectrics found in the literature; it is mainly due to the effect of polarization fluctuation at the semiconductor–dielectric interface …”

mentioning

confidence: 66%

Textured Poling of the Ferroelectric Dielectric Layer for Improved Organic Field‐Effect Transistors

Laudari

Pickett

Hogan

et al. 2019

Adv Materials Inter

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the amorphous silicon benchmark of 1 cm 2 Vs −1 , application of organic FETs in displays and sensors have now become a reality. Organic FETs differ from metal oxide semiconductor FET (MOSFET) in several ways; most organic FETs operate in the accumulation region compared to the inversion operating region of MOSFETs. The metal-semiconductor and the semiconductor-dielectric interfaces play a vital role in charge transport properties. In particular, the dielectric interface is notorious for charge trapping. As a result, achieving intrinsic transport in the organic semiconductor layer in FET architectures is very challenging. Using the same organic semiconductor film (either evaporated or solution processed) but different dielectric layers may yield order of magnitude differences in FET carrier mobilities. On the other hand, ultrapure organic single crystals such as rubrene, grown from vapor phase, have shown intrinsic FET mobilities higher than 20 cm 2 Vs −1 . [2] Since the charge accumulation is directly proportional to the dielectric capacitance (C), where; κ being the dielectric constant, ε 0 the permittivity of free space, A the area of the capacitor, and d the thickness of the dielectric, a high value of the dielectric capacitance is required for lowering the operating voltage of FETs. Low-operating voltage FETs, therefore, demand high κ dielectrics, which are more difficult to achieve with polymeric materials compared to inorganic dielectric materials due to their inherently low κ values. Facile methods of preparing polymer dielectrics by appropriate choice of solvents result in thin (well below 100 nm) and pinhole-free films for low-operating voltage FETs. [3,4] Polymer ferroelectrics with higher values of κ compared to non-ferroelectric polymers allow an alternate route toward boosting the capacitance values in FETs. Poly(vinylidene fluoride) (PVDF) ferroelectric polymer and its copolymer such as PVDF trifluorethylene (PVDF-TrFE) with κ > 8 at room temperature have been extensively used in memory and pressure sensing applications. [5][6][7][8][9] Naturally, such dielectrics also provide a route toward low-operating voltage FETs. The vast range of work has utilized PVDF and its copolymers as a gate dielectric in organic FETs. [10][11][12][13] Design of PVDF with carbon quantum dots has opened applications in nanogenerators where the mechanical energy may be efficiently converted to electricity. [14] More recently, PVDF copolymers have been used with charge-modulated organic FETs for multimodal Polymer ferroelectrics are playing an increasingly active role in flexible memory application and wearable electronics. The relaxor ferroelectric dielectric, poly(vinylidene fluoride trifluorethylene (PVDF-TrFE), although vastly used in organic field-effect transistors (FETs), has issues with gate leakage current especially when the film thickness is below 500 nm. This work demonstrates a novel method of selective poling the dielectric layer. By using solutionprocessed 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-p...

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mentioning

confidence: 66%

Textured Poling of the Ferroelectric Dielectric Layer for Improved Organic Field‐Effect Transistors

Laudari

Pickett

Hogan

et al. 2019

Adv Materials Inter

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“…For the PVDF-TrFE devices the contact resistance was roughly two orders of magnitude smaller than the channel resistance. The slightly higher contact resistance with PVDF-TrFE has been attributed to the polarization fluctuation at the semiconductor/ferroelectric interface, which broadens the trap charge distribution in the contact region of the semiconductor [34]. Furthermore, the contact resistance does not change much in the 100 K -300 K range [35], the temperature range used in this work.…”

Section: Temperature Dependent Fet Characteristicsmentioning

confidence: 86%

Bandlike Transport in Ferroelectric-Based Organic Field-Effect Transistors

Laudari

Guha

2016

Phys. Rev. Applied

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The dielectric constant of polymer ferroelectric dielectrics may be tuned by changing the temperature, offering a platform for monitoring changes in interfacial transport with the polarization strength in organic field-effect transistors (FETs). Temperature dependent transport studies of FETs have been carried out from a solution-processed organic semiconductor, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), using both ferroelectric and nonferroelectric gate insulators. Non-ferroelectric dielectric based TIPS-pentacene FETs show a clear activated transport in contrast to the ferroelectric dielectric polymer, poly(vinylidene fluoridetrifluoroethylene) (PVDF-TrFE), where a negative temperature coefficient of the mobility is observed in the ferroelectric temperature range. The current-voltage (I-V) characteristics from TIPSpentacene diodes signal a space-charge-limited conduction (SCLC) for a discrete set of trap levels, suggesting that charge injection and transport occurs through regions of ordering in the semiconductor. The carrier mobility extracted from temperature-dependent I-V characteristics from the trap-free SCLC region shows a negative coefficient beyond 200 K, similar to the trend observed in FETs with the ferroelectric dielectric. At moderate temperatures, the polarization fluctuation dominant transport inherent to a ferroelectric dielectric in conjunction with the nature of traps results in an effective de-trapping of the shallow trap states into more mobile states in TIPS-pentacene.

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“…In addition, tremendous efforts have also been made to improve the interfacial interaction of PVDF/semiconductor or PVDF/gate electrode in PVDF based OFeFETs for minimizing structural defects 36,41,47,73,97,98 . Velusamy et al .…”

Section: Flexible Ofefet Devicesmentioning

confidence: 99%

Organic ferroelectric field‐effect transistor memories with poly(vinylidene fluoride) gate insulators and conjugated semiconductor channels: a review

Zhu

Mitsuishi

2020

Polymer International

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Organic electronics have attracted considerable interest because of their low temperature solution processability, versatile material synthesis and compatibility with a wide range of traditional fabrication methods such as rod‐coating, inkjet and roll‐to‐roll printing techniques. Organic ferroelectric field‐effect transistors (OFeFETs) with a three‐terminal device architecture have ferroelectric thin films as gate insulator layers and semiconductor films as charge transport channel layers. OFeFETs have been demonstrated with non‐volatile memory functions that can retain their high or low conductive states in the semiconductor channel when the power is turned off. The reversible polarization switching in the ferroelectric gate insulator layer between two stable polarized states provides the basis for binary coded memory functions. In this review, we summarize recent development of OFeFETs based on ferroelectric poly(vinylidene fluoride) dielectrics and organic semiconductor channels. © 2020 Society of Chemical Industry

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Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface

Cited by 23 publications

References 31 publications

Textured Poling of the Ferroelectric Dielectric Layer for Improved Organic Field‐Effect Transistors

Textured Poling of the Ferroelectric Dielectric Layer for Improved Organic Field‐Effect Transistors

Bandlike Transport in Ferroelectric-Based Organic Field-Effect Transistors

Organic ferroelectric field‐effect transistor memories with poly(vinylidene fluoride) gate insulators and conjugated semiconductor channels: a review

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