Reduced Schottky barrier height at metal/CVD-grown MoTe2 interface

Abstract

We demonstrated that Schottky barrier height (SBH) at the metal/CVD-grown MoTe2 interface can be significantly reduced with tunnel contact by inserting a thin Al2O3 layer regardless of the metal work function. The existence of strong Fermi level pinning (FLP) at the metal/MoTe2 interface was verified, while depinning cannot be achieved with Al2O3 insertion. Thus, the fixed charges inside the Al2O3 were proposed to be responsible for the effective SBH reduction in virtue of the eliminated SBH reduction after the post-annealing treatment. This work provides a feasible way to solve the contact issue and favors for the fabrication of high performance MoTe2-based electronic devices.

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors

“…As the scaling of silicon-based transistor channels in integrated circuits approaches its physical limits, transition metal dichalcogenides (TMDs) with atomic-level thin thickness and dangling-bond-free surface such as MoS 2 have attracted tremendous attention for the next-generation electronics . Except for the short-channel effect induced by channel length scaling, the contact issue characterized by the Schottky barrier at the metal electrodes and semiconductor channel interface is also a crucial factor limiting the device scaling and performance, especially for 2D semiconductors that cannot generate a heavily doped region by ion implantation. − Currently, versatile attempts such as the selection of suitable work-function metals, tunneling contacts, − edge contacts, , and semimetal contacts , have been widely explored to achieve barrier-free contacts for improving device performance. Among these attempts, a remarkable capacity to approach the quantum limit has been demonstrated with elemental semimetal contacts (Bi and Sb).…”