2019
DOI: 10.1016/j.jcrysgro.2019.02.017
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Reduced radial resistivity variation of FZ Si wafers with Advanced NTD

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Cited by 3 publications
(1 citation statement)
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“…It can be seen from the figure that the EM, Marangoni, and buoyancy forces form a closed loop in the melt region, and the presence of these forces causes the existence of vortices in the melt. Vortex 3 is caused by the EM force due to the dense magnetic induction lines near it; vortex 1 is caused by the Marangoni and buoyancy forces and is unstable; and vortex 2 is driven by the buoyancy force alone, and the generation of these vortices affects the distribution of RRV, so that when pulling doped single crystals, impurities in the melt flow faster at the vortex, resulting in lower resistivity [25] values in the middle of the two vortices. V g is the local crystal growth rate, and L is the latent heat of silicon.…”
Section: Melt Temperature and Flowmentioning
confidence: 99%
“…It can be seen from the figure that the EM, Marangoni, and buoyancy forces form a closed loop in the melt region, and the presence of these forces causes the existence of vortices in the melt. Vortex 3 is caused by the EM force due to the dense magnetic induction lines near it; vortex 1 is caused by the Marangoni and buoyancy forces and is unstable; and vortex 2 is driven by the buoyancy force alone, and the generation of these vortices affects the distribution of RRV, so that when pulling doped single crystals, impurities in the melt flow faster at the vortex, resulting in lower resistivity [25] values in the middle of the two vortices. V g is the local crystal growth rate, and L is the latent heat of silicon.…”
Section: Melt Temperature and Flowmentioning
confidence: 99%