2015
DOI: 10.1016/j.ceramint.2015.07.041
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Reduced leakage current and large polarization of Na0.5Bi0.5Ti0.98Mn0.02O3 thin film annealed at low temperature

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Cited by 14 publications
(6 citation statements)
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“…The sol–gel method was used to fabricate Sr 1– x ­(Na 0.5 Bi 0.5 ) x ­Ti 0.99 ­Mn 0.01 O 3 ( x = 0, 0.005, 0.01, and 0.02) thin films on the Pt/Ti/SiO 2 /Si substrate. To improve electric resistivity, appropriate manganese was doped in thin films. ,, The detailed experimental description for preparing thin films has been reported in our previous papers. The test method is also the same as our previous papers. ,, The only difference is that the annealing temperature is 625 °C.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The sol–gel method was used to fabricate Sr 1– x ­(Na 0.5 Bi 0.5 ) x ­Ti 0.99 ­Mn 0.01 O 3 ( x = 0, 0.005, 0.01, and 0.02) thin films on the Pt/Ti/SiO 2 /Si substrate. To improve electric resistivity, appropriate manganese was doped in thin films. ,, The detailed experimental description for preparing thin films has been reported in our previous papers. The test method is also the same as our previous papers. ,, The only difference is that the annealing temperature is 625 °C.…”
Section: Methodsmentioning
confidence: 99%
“…To improve electric resistivity, appropriate manganese was doped in thin films. 36,60,61 The detailed experimental description for preparing thin films has been reported in our previous papers. The test method is also the same as our previous papers.…”
Section: ■ Methodsmentioning
confidence: 99%
“…The volatilization of Bi and Na and variable valence of Ti are easy to generate oxygen vacancy for BNT-based thin films resulting in a large leakage current. Single mental oxides (MnO 2 [101,102], Fe 2 O 3 [103], etc.) are used to modify BNT films, which would form different defect complexes to compensate charge balance and suppress oxygen vacancy migration.…”
Section: Lead-free Relaxor Ferroelectric Ceramicsmentioning
confidence: 99%
“…Manganese doping is widely acknowledged as an effective method for ameliorating the detrimental effects of element volatilization in NBT-based films [12][13][14]. For instance, it has been demonstrated that Mn-doped NBT films have leakage current densities up to four orders of magnitude lower than those observed in pure NBT films [12].…”
Section: Introductionmentioning
confidence: 99%