Abstract:The accurate calculation of channel electrostatics
parameters, such as charge density and potential, in ultra-thin body (UTB) devices requires self-consistent solution of the
Poisson’s equation and the full band structure, which is channel
material and thickness dependent. For cubic crystals like silicon,
the semi-empirical sp3d5s* tight-binding (TB) model is preferred
in device simulations, over the density functional theory, to
obtain the full band structure because of being computationally
less intensive an… Show more
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