2018
DOI: 10.1002/adfm.201705136
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Reduced Graphene Oxide as a Catalyst Binder: Greatly Enhanced Photoelectrochemical Stability of Cu(In,Ga)Se2 Photocathode for Solar Water Splitting

Abstract: The photoelectrochemical (PEC) properties of a Cu(In,Ga)Se2 (CIGS) photocathode covered with reduced graphene oxide (rGO) as a catalyst binder for solar‐driven hydrogen evolution are reported. Chemically reduced rGO with various concentrations is deposited as an adhesive interlayer between CIGS/CdS and Pt. PEC characteristics of the CIGS/CdS/rGO/Pt are improved compared to the photocathode without rGO due to enhancement of charge transfer via efficient lateral distribution of photogenerated electrons by conduc… Show more

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Cited by 50 publications
(46 citation statements)
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“…Although solution‐based carbon‐precursor coating followed by high‐temperature annealing (550 °C, N 2 atmosphere) has been carried out to create a uniform protective carbon layer surrounding a Cu 2 O nanowire photocathode (improving its stability as well as photocurrent density), this complex multistep coating procedure was inadequate as a versatile tool for various p‐type semiconductor materials . Recently, Koo et al demonstrated the use of reduced graphene oxide as a catalyst binder onto a CdS/CuInGaSe 2 photocathode, exhibiting multifunctional advantages including not only the physical binding of the Pt catalyst, but also preventing the in‐diffusion of Pt and the corrosion of the CdS layer . Despite the significantly enhanced long‐term stability achieved (no degradation up to 7 h under a pH of 6.8), detailed understanding of the degradation mechanism as well as the behavior of the photogenerated electrons was still elusive.…”
Section: Introductionmentioning
confidence: 99%
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“…Although solution‐based carbon‐precursor coating followed by high‐temperature annealing (550 °C, N 2 atmosphere) has been carried out to create a uniform protective carbon layer surrounding a Cu 2 O nanowire photocathode (improving its stability as well as photocurrent density), this complex multistep coating procedure was inadequate as a versatile tool for various p‐type semiconductor materials . Recently, Koo et al demonstrated the use of reduced graphene oxide as a catalyst binder onto a CdS/CuInGaSe 2 photocathode, exhibiting multifunctional advantages including not only the physical binding of the Pt catalyst, but also preventing the in‐diffusion of Pt and the corrosion of the CdS layer . Despite the significantly enhanced long‐term stability achieved (no degradation up to 7 h under a pH of 6.8), detailed understanding of the degradation mechanism as well as the behavior of the photogenerated electrons was still elusive.…”
Section: Introductionmentioning
confidence: 99%
“…[6,7] In this respect, an interface modification to promote photoelectron transfer from TiO 2 to a cocatalyst would lead to improving the PEC stability of the TiO 2 -protected photocathode by hampering TiO 2 photoreduction. [29] Despite the significantly enhanced longterm stability achieved (no degradation up to 7 h under a pH of 6.8), detailed understanding of the degradation mechanism as well as the behavior of the photogenerated electrons was still elusive. Although solutionbased carbon-precursor coating followed by high-temperature annealing (550 °C, N 2 atmosphere) has been carried out to create a uniform protective carbon layer surrounding a Cu 2 O nanowire photocathode (improving its stability as well as photo current density), this complex multistep coating procedure was inadequate as a versatile tool for various p-type semiconductor materials.…”
mentioning
confidence: 99%
“…CuIn x Ga 1− x Se 2 (CIGS) in its chalcopyrite phase has attracted considerable interest as a promising p‐type light absorber, owing to its tunable band energy (1.0–1.7 eV), large optical absorption coefficient (≈10 5 cm −1 ), outstanding thermal, environmental and electrical stabilities . In terms of application, CIGS thin films have been used in thin‐film solar cells, solar modules, and photoelectrochemical photocathodes . The above‐stated excellent features also make CIGS great potential application in broadband photodetection.…”
Section: Introductionmentioning
confidence: 99%
“…All photoelectrodes discussed above are photoanodes based on n‐type semiconductors, which are commonly used to perform OER. In contrast, the p‐type semiconductor material can also be utilized as photocathodes to perform HER under the incident light radiation 169‐171 …”
Section: Other Materials/g‐c3n4 Heteroarrays As Photoelectrodesmentioning
confidence: 99%