Reduced Effective g-Factor in Graphene

Higuchi, Masahiko; Hamal, Dipendra Bahadur; Shrestha, Amit; Higuchi, Katsuhiko

doi:10.7566/jpsj.88.094707

Cited by 8 publications

(17 citation statements)

References 62 publications

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“…It is well known that graphene exhibits diamagnetism under a weak external magnetic field [6][7][8][9][10][11][12][13][14][15]. This fact has also been confirmed theoretically by means of our scheme [16], and specifically by the magnetic-field containing relativistic tight-binding (MFRTB) method [17][18][19][20][21].…”

Section: Introductionsupporting

confidence: 76%

“…This establishes the fact that the Rashba effect is a primary cause for the reduction of the g-factor in graphene. As already explained, the diamagnetism of graphene is another source for the reduction of its g-factor, by about 0.7 percent [16]. Additionally accounting for this factor suggests that our scheme slightly overestimates the influence of the Rashba effect on the g-factor of graphene.…”

Section: [Ev] W mentioning

confidence: 63%

“…Future work can examine the actual magnitude of effect of the orbital magnetic moment on the g-factor to confirm whether it is significant or not. The effect of the orbital magnetic moment can be treated theoretically by using the MFRTB method [16][17][18][19][20][21]. Our subsequent work will consider extending the MFRTB method [16][17][18][19][20][21] to incorporate the Rashba effect, in order to apply it on graphene.…”

Section: Discussionmentioning

confidence: 99%

“…In our previous paper, we demonstrated that the diamagnetism of graphene is one of the sources for the reduction in its g-factor [16]. Specifically, the estimated g-factor of graphene after accounting for the effect of diamagnetism is 1.986, when the external magnetic field is 1 [T], which is a reduction of about 0.7 percent.…”

Section: Introductionmentioning

confidence: 99%

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Reduction of g-factor due to Rashba effect in graphene

Shrestha

Higuchi

Yoshida

et al. 2021

Journal of Applied Physics

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Graphene is a highly promising material in the field of spin electronics. Recent experiments on electron spin resonance have observed a reduction in the g-factor of graphene. In this paper, we focus on the Rashba effect, which is caused by the work function existing near the surface of graphene. The Rashba effect tilts the spin magnetic moment to the in-plane direction of the graphene sheet, potentially reducing the g-factor. We evaluate this reduction using a simple model system incorporating the Rashba and spin Zeeman effects. We then demonstrate that the resultant g-factor is in close agreement with that observed in the prior experiments, indicating that the Rashba effect is able to account for the remaining reduction in the g-factor of graphene.

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Section: Introductionsupporting

confidence: 76%

Section: [Ev] W mentioning

confidence: 63%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Reduction of g-factor due to Rashba effect in graphene

Shrestha

Higuchi

Yoshida

et al. 2021

Journal of Applied Physics

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“…, where λ = ±1 for the conduction and valence band, and s = ±1 for the spin up and down (we shall assume a g-factor g 2, which is a good approximation in graphene [33]). The LLs do not depend on the ξ index and are identical for both K and K valleys.…”

Section: The Modelmentioning

confidence: 99%

Heat capacity in doped graphene under magnetic fields: the role of spin splitting

Escudero¹,

Ardenghi²,

Jasen³

2020

J. Phys.: Condens. Matter

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We study the electronic heat capacity in doped graphene under magnetic fields. The partition function is calculated considering only the thermal excitations in the last occupied energy levels. Due to the large energy separation between the Landau levels (LLs) and the Zeeman splitting, at low temperatures the heat capacity is dominated by the spin excitations in the last occupied LL. Correspondingly the heat capacity oscillates with maximum amplitude at half filling of each LL. At higher temperatures the inter-LLs excitations dominate the heat capacity, with maximum amplitude at full filling factors. The oscillation amplitudes are compared with the phonon heat capacity C p . It is shown that the spin induced heat capacity oscillations have a maximum amplitude approaching 3% of C p , whereas for the inter-LLs excitations the maximum amplitude is only 0.1% of C p . These amplitudes decrease in the presence of impurities, although the effect is appreciable if the LLs broadening is bigger than the excitation energies.

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Molecular Understanding of Adhesion of Epoxy Resin to Graphene and Graphene Oxide Surfaces in Terms of Orbital Interactions

et al. 2023

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The adhesion mechanism of epoxy resin (ER) cured material consisting of diglycidyl ether of bisphenol A (DGEBA) and 4,4′-diaminodiphenyl sulfone (DDS) to pristine graphene and graphene oxide (GO) surfaces is investigated on the basis of first-principles density functional theory (DFT) with dispersion correction. Graphene is often used as a reinforcing filler incorporated into ER polymer matrices. The adhesion strength is significantly improved by using GO obtained by the oxidation of graphene. The interfacial interactions at the ER/graphene and ER/GO interfaces were analyzed to clarify the origin of this adhesion. The contribution of dispersion interaction to the adhesive stress at the two interfaces is almost identical. In contrast, the DFT energy contribution is found to be more significant at the ER/GO interface. Crystal orbital Hamiltonian population (COHP) analysis suggests the existence of hydrogen bonding (H-bonding) between the hydroxyl, epoxide, amine, and sulfonyl groups of the ER cured with DDS and the hydroxyl groups of the GO surface, in addition to the OH−π interaction between the benzene rings of ER and the hydroxyl groups of the GO surface. The H-bond has a large orbital interaction energy, which is found to contribute significantly to the adhesive strength at the ER/GO interface. The overall interaction at the ER/graphene is much weaker due to antibonding type interactions just below the Fermi level. This finding indicates that only dispersion interaction is significant when ER is adsorbed on the graphene surface.

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Reduced Effective g-Factor in Graphene

Cited by 8 publications

References 62 publications

Reduction of g-factor due to Rashba effect in graphene

Reduction of g-factor due to Rashba effect in graphene

Heat capacity in doped graphene under magnetic fields: the role of spin splitting

Molecular Understanding of Adhesion of Epoxy Resin to Graphene and Graphene Oxide Surfaces in Terms of Orbital Interactions

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