Reduced distributions of the set current and the voltage of unipolar resistance switching in a current-biased set process

Na, Sang-Chul; Chun, Min Chul; Jang, Gyuyeon; Shin, Hyejin; Kwon, Youngsun; Kang, Bo Soo; Lee, Keundong; Yoon, Chansoo; Park, Bae Ho

doi:10.3938/jkps.68.1467

Cited by 2 publications

(1 citation statement)

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“…An analysis [ 56 , 57 , 58 , 59 , 60 , 61 , 62 ] has shown that structures based on binary metal oxides are promising, especially zinc oxide (ZnO) obtained by pulsed laser deposition (PLD). To produce neuromorphic systems based on ZnO films on an industrial scale, fabrication regimes, as well as various control parameters on the resistive switching of ReRAM elements, are needed [ 63 , 64 ]. Therefore, it is necessary to study the effect of the ReRAM size element (the oxide film simulates the computing part of the biological brain, the neuron) and the contact thickness (the metal/oxide transition simulates the memory part of the biological brain, the synapse) on the memristive effect.…”

Section: Introductionmentioning

confidence: 99%

Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications

Tominov,

Vakulov,

Avilov

et al. 2023

Nanomaterials

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This paper proposes two different approaches to studying resistive switching of oxide thin films using scratching probe nanolithography of atomic force microscopy (AFM). These approaches allow us to assess the effects of memristor size and top-contact thickness on resistive switching. For that purpose, we investigated scratching probe nanolithography regimes using the Taguchi method, which is known as a reliable method for improving the reliability of the result. The AFM parameters, including normal load, scratch distance, probe speed, and probe direction, are optimized on the photoresist thin film by the Taguchi method. As a result, the pinholes with diameter ranged from 25.4 ± 2.2 nm to 85.1 ± 6.3 nm, and the groove array with a depth of 40.5 ± 3.7 nm and a roughness at the bottom of less than a few nanometers was formed. Then, based on the Si/TiN/ZnO/photoresist structures, we fabricated and investigated memristors with different spot sizes and TiN top contact thickness. As a result, the HRS/LRS ratio, USET, and ILRS are well controlled for a memristor size from 27 nm to 83 nm and ranged from ~8 to ~128, from 1.4 ± 0.1 V to 1.8 ± 0.2 V, and from (1.7 ± 0.2) × 10−10 A to (4.2 ± 0.6) × 10−9 A, respectively. Furthermore, the HRS/LRS ratio and USET are well controlled at a TiN top contact thickness from 8.3 ± 1.1 nm to 32.4 ± 4.2 nm and ranged from ~22 to ~188 and from 1.15 ± 0.05 V to 1.62 ± 0.06 V, respectively. The results can be used in the engineering and manufacturing of memristive structures for neuromorphic applications of brain-inspired artificial intelligence systems.

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