Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Abstract

This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined..

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor

“…[1][2][3] Accordingly, the International Technology Roadmap for Semiconductors (ITRS) has recently completed an assessment of eight memory technologies among the emerging research devices (ERDs) and recommended that Redox RAM [4][5][6][7] and STT-MRAM [ 8 , 9 ] (spin-transfer torque magnetic RAM) receive additional focus in research and development. [ 1 ] Redox RAM is one type of memristor [10][11][12][13][14][15] that has shown more than adequate scalability, non-volatility, multiplestate operation, 3D stackability, and complementary metaloxide semiconductor (CMOS) compatibility.…”

Strain Control of Oxygen Vacancies in Epitaxial Strontium Cobaltite Films

“…[4][5][6][7] Moreover, the functional manipulation of oxygen vacancies is critical for several key information, energy, and environmental technologies, including high T c superconductors, colossal magnetoresistive materials, oxygen membranes, energy storage, memristors, and other electrochemical devices. [8][9][10][11][12] Traditionally, the concentration and ordering of these vacancies have been dictated by the exposure of oxides to a reducing environment, e.g. oxygen partial pressure and temperature.…”

Programmable Resistive-Switch Nanowire Transistor Logic Circuits

“…21−23 First, in the resistive switch the state change is largely due to a local structural/ composition change in the material between switch electrodes, and the retention is often projected to be beyond years. 21,22 Second, because the process is highly localized, there is potential for aggressive device scaling 23 without sacrificing retention, which contrasts charge-based systems. 24 Third, the programming speed can be below the microsecond region achieved in conventional charge-based systems.…”

“…24 Third, the programming speed can be below the microsecond region achieved in conventional charge-based systems. 22,23 Below we first describe the working mechanism and performance of the resistive-switch nanowire transistor device and then demonstrate the integration of this element into a crossbar architecture for programmable logic circuits.…”