Redistribution Layer Preparation on Glass Panel for Panel Level Fan Out Package by Photosensitive Polyimide

Masuda, Yuki; Hashimoto, Keika; Shoji, Yu; Koyama, Yutaro; Tomikawa, Masao

doi:10.2494/photopolymer.31.629

Cited by 3 publications

(2 citation statements)

References 3 publications

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“…Thus he awarded from the Pan Pacific Microelectronics Conference as a best paper. By using the knowledge, they demonstrated a panel level re-distribution layer on a glass panel substrate for the advanced Fan-Out Packages [10].…”

Section: Masao Tomikawamentioning

confidence: 99%

The Photopolymer Science and Technology Award

Tomikawa

2020

J. Photopol. Sci. Technol.

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The Photopolymer Science and Technology Award No. 201100, the Outstanding Achievement Award 2020 was presented to Dr. Masao Tomikawa for his outstanding achievements in photo definable polyimides science and technology including the photo reaction mechanism of the Ionic-bonded-photosensitive polyimide, and the pioneering development of positive photo definable polyimide by partial esterification of poly(amic acid) for semiconductor stress buffer and for the organic light emitting diode (OLED) displays. In addition, he contributed the Cu compatibility study for the improvement to long time reliability of the polyimide and Cu interconnection.

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Section: Masao Tomikawamentioning

confidence: 99%

The Photopolymer Science and Technology Award

Tomikawa

2020

J. Photopol. Sci. Technol.

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“…Photosensitive polyimides (PSPIs) represent a class of functional photoresists combining the functionalities of photosensitivity for common photoresists and the high-temperature and dielectric stability for polyimide dielectrics [1][2][3]. Thus, PSPIs have been widely used as passivation layers for semiconductor chips in microelectronic fabrication, interlayer dielectrics for flexible organic light-emitting diode (OLED) devices, or coatings for optical fibers [4][5][6]. It is different from the common photoresists which are usually used as the sacrifice medium for semiconductor chips that the PSPI layers are often contained in the final microelectronic or optoelectronic devices as permanent components.…”

Section: Introductionmentioning

confidence: 99%

Intrinsically Negative Photosensitive Polyimides with Enhanced High-Temperature Dimensional Stability and Optical Transparency for Advanced Optical Applications via Simultaneous Incorporation of Trifluoromethyl and Benzanilide Units: Preparation and Properties

Gao

Wang²,

Jia³

et al. 2022

Polymers

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Negative photosensitive polyimides (PSPIs) with the photo-patterned ability via the photocrosslinking reactions induced by the i-line (365 nm) and h-line (426 nm) emitting wavelengths in high-pressure mercury lamps have been paid increasing attention in semiconductor fabrication, optical fiber communications, and other advanced optoelectronic areas. In the current work, in view of the optical and thermo-mechanical disadvantages of the currently used negative PSPIs, such as the intrinsically photosensitive or auto-photosensitive systems derived from 3,3’,4,4’-benzophenonetetracarboxylic dianhydride (BTDA) and the ortho-alkyl- substituted aromatic diamines, a series of modified negative PSPIs with the enhanced optical transparency in the wavelength of 365~436 nm and apparently reduced coefficients of linear thermal expansion (CTE) were developed. For this purpose, a specific aromatic diamine with both of trifluoromethyl and benzanilide units in the molecular structures, 2,2’-bis(trifluoromethyl)-4,4’-bis[4-(4-amino-3-methyl)benzamide]biphenyl (MABTFMB) was copolymerized with BTDA and the standard 3,3’,5,5’-tetramethyl-4,4’-diaminodiphenylmethane (TMMDA) diamine via a two-step chemical imidization procedure. As compared with the pristine PI-1 (BTDA-TMMDA) system, the new-developed fluoro-containing PSPI systems (FPI-2~FPI-7) exhibited the same-level solubility in polar aprotic solvents, including N-methyl-2-pyrrolidone (NMP) and N,N- dimethylacetamide (DMAc). The FPI films cast from the corresponding FPI solutions in NMP showed the optical transmittances of 78.3–81.3% at the wavelength of 436 nm (T436, h-line), which were much higher than that of the PI-1 (T436 = 60.9%). The FPI films showed the CTE values in the range of 40.7 × 10−6/K to 54.0 × 10−6/K in the temperature range of 50 to 250 °C, which were obviously lower than that of PI-1 (CTE = 56.5 × 10−6/K). At last, the photosensitivity of the FPI systems was maintained and the micro-pattern with the line width of 10 μm could be clearly obtained via the standard photolithography process of FPI-7 with the molar ratio of 50% for MABTFMB in the diamine moiety.

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