Rectifying Effect in Boron Nanowire Devices

Wang, Dawei; Otten, Carolyn Jones; Buhro, William E.; Lu, Jia Grace

doi:10.1109/tnano.2004.828542

Cited by 12 publications

(11 citation statements)

References 21 publications

(24 reference statements)

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“…The metallization of the source and drain contacts consists of 20-nm-thick Ni adhesive layer and 300-nm-thick Au lead. 21 Our results demonstrate the potential of using Ga 2 O 3 nanowire as a building block in future nanoscale devices. 3͑a͒, where the p + + silicon layer serves as a backgate.…”

mentioning

confidence: 53%

β - Ga 2 O 3 nanowires: Synthesis, characterization, and p-channel field-effect transistor

Chang

Fan

Tseng

et al. 2005

Applied Physics Letters

126

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Quasione-dimensional Ga2O3 nanowires are synthesized via catalytic chemical vapor deposition method. Their morphology and crystal structure are characterized by electron microscopy and x-ray diffraction techniques, and their optical property is studied by photoluminescence measurement. To develop their future application in nanoelectronic devices, the as-grown Ga2O3 nanowires are doped with zinc to increase its carrier concentration and subsequently fabricated into field-effect transistors. Electron transport measurements show that the doped nanowires exhibit p-type semiconducting behavior with a significant enhancement of conductivity.

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mentioning

confidence: 53%

β - Ga 2 O 3 nanowires: Synthesis, characterization, and p-channel field-effect transistor

Chang

Fan

Tseng

et al. 2005

Applied Physics Letters

126

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“…[1][2][3][4][5][6][7][8][9] Semiconductor nanowire is considered as a good candidate for materials of field effect transistor (FET) devices. High electric conductance is expected due to the ballistic conduction.…”

Section: Introductionmentioning

confidence: 99%

Calculation of the Electronic State in Electronic Current for Nanowire Models

Senami

Ikeda

Fukushima

et al. 2010

Jpn. J. Appl. Phys.

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The first results of the calculations of our program code are shown for nanowire models. In our code, the electronic current is treated as quantum states, and the effects of the coulomb and exchange interaction by conductive electrons on electrons in system are included. We show our results as the local electronic current density defined by one of the authors. The magnetic field induced by the electronic current is studied by including effects of vector potential in electronic state calculations. The effects on the electrons in systems by the conductive electrons are also studied. By the existence of the conductive electrons in the systems, the energy eigenvalues of higher orbitals rise, while the lower orbitals are stabilized by the conductive states. It may imply that materials is made more conductive by conductive electrons since the electons in the materials are unstabilized by them. #

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“…According to the Sah-Noyce-Shockley theory, the ideality factor for a recombination-generation dominated current cannot exceed a value of two. 6 However, ideality factors exceeding a value of 2 have been reported in diodes fabricated in nanowires, [7][8][9] hence there are other mechanisms at play that should be considered. In the case of nanowires, the ratio of surface area to bulk can be large; hence surface recombination can play a significant role.…”

Section: Resultsmentioning

confidence: 99%

Current Rectification in a Single Silicon Nanowire p–n Junction

Rangineni¹,

Qil²,

Goncher³

et al. 2008

j nanosci nanotechnol

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Diodes within individual silicon nanowires were fabricated by doping them during growth to produce p-n junctions. Electron beam lithography was then employed to contact p- and n-doped ends of these nanowires. The current-voltage (I-V) measurements showed diode-like characteristics with a typical threshold voltage (Vt) of about 1 V and an ideality factor (n) of about 3.6 in the quasi-neutral region. The reverse bias I-V measurement showed an exponential behavior, indicating tunneling as the current leakage mechanism.

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Rectifying Effect in Boron Nanowire Devices

Cited by 12 publications

References 21 publications

β - Ga 2 O 3 nanowires: Synthesis, characterization, and p-channel field-effect transistor

β - Ga 2 O 3 nanowires: Synthesis, characterization, and p-channel field-effect transistor

Calculation of the Electronic State in Electronic Current for Nanowire Models

Current Rectification in a Single Silicon Nanowire p–n Junction

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