Rectifying characteristic in La_0.7Sr_0.3MnO₃/Nb-1wt%-doped SrTiO₃ p–n junction prepared by magnetron sputtering technique

Abstract

La0.7Sr0.3MnO3/Nb-1 wt%-doped SrTiO3 p–n junction, which was fabricated by the magnetron sputtering technique, exhibits excellent rectifying characteristic over the temperature range from 40 to 320 K. Moreover, it is worth noting that the rectifying behaviour is nearly independent of temperature. The modulated electrical and magnetic properties of La0.7Sr0.3MnO3 by the built-in electric field near the interface of the junction is also achieved.