2011
DOI: 10.1007/s00339-011-6562-2
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Rectifying and photovoltaic properties in La0.7Sr0.3CoO3−σ /Si heterostructure

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Cited by 2 publications
(2 citation statements)
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“…Considering the practical applications in devices, it is of special significance to study the integration of manganites with Si. So far, a large amount of phenomena based on manganites/Si heterostructures have been observed, such as photovoltaic effect, [83][84][85][86][87] rectification characteristics, [88] and magnetoresistance. [89][90][91] For example, Chen et al [92] prepared a La 0.88 Te 0.12 MnO 3 /Si heterostructure using a pulsed laser deposition method.…”
Section: Manganites/si Heterostructuresmentioning
confidence: 99%
“…Considering the practical applications in devices, it is of special significance to study the integration of manganites with Si. So far, a large amount of phenomena based on manganites/Si heterostructures have been observed, such as photovoltaic effect, [83][84][85][86][87] rectification characteristics, [88] and magnetoresistance. [89][90][91] For example, Chen et al [92] prepared a La 0.88 Te 0.12 MnO 3 /Si heterostructure using a pulsed laser deposition method.…”
Section: Manganites/si Heterostructuresmentioning
confidence: 99%
“…For example, the properties of p-n junctions exhibit significant magnetic-field effects [12,13]. We have fabricated the LaSrCoO/Si heterostructure by depositing a LaSrCoO film on an n-type Si substrate and found photovoltaic properties and crossover of magnetoresistance from positive to negative [14,15]. In this paper, the heterostructure composed of a PCCO film and a 0.7 wt% Nb-doped SrTiO 3 (100) (NSTO) substrate was fabricated using the pulsed-laser deposition method.…”
mentioning
confidence: 99%