Rectifying and negative differential resistance behaviors of a functionalized Tour wire: The position effects of functional groups

Kwong, Gordon; Zhang, Zhenhua; Pan, Jinbo

doi:10.1063/1.3641421

Cited by 18 publications

(9 citation statements)

References 17 publications

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“…They investigated the rectification mechanism through a donor-σ bridge-acceptor wire and found rectifying properties in a direction opposite to the one proposed by the Aviram–Rathner rectification mechanism . Negative differential resistance was estimated in asymmetrically substituted and asymmetrically coupled to the electrodes Tour wires . Novel donor-π bridge-acceptor wires were suggested that show rectifying ratios close to 10 .…”

Section: Theoretical Backgroundmentioning

confidence: 99%

Current Rectification in Nitrogen- and Boron-Doped Nanographenes and Cyclophanes

Staykov

Tsuji

et al. 2012

J. Phys. Chem. C

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Electron transport properties of boron-and nitrogen-doped polycyclic aromatic hydrocarbons and cyclophanes are investigated with the nonequilibrium Green's function method and compared to transport properties of the unsubstituted species. The aim of the study is to derive the effect of the heteroatomic defects on the conductance of nanographenes and to propose new effective ways for current control and design of carbon devices. Of special interest are the electrical current rectifying properties of asymmetrically doped nanographenes and cyclophanes, as well as the rectification mechanism. The mechanisms of donor-π bridgeacceptor and donor-σ bridge-acceptor rectification are used to explain the diode-like properties of asymmetrically doped nanographenes and cyclophanes. The electron-rich nitrogen and electron-poor boron heteroatoms introduce conductance channels within the highest occupied molecular orbital−lowest unoccupied molecular orbital gaps of the hydrocarbons and cyclophanes and significantly enhance the conductance. The combination of nitrogen and boron impurities in one polycyclic aromatic hydrocarbon leads to asymmetrical I/V curves. The rectification is further enhanced in the cyclophanes where the boron impurities are located in one of the layers and the nitrogen impurities in the other. Owing to the efficient separation of the donor and acceptor parts, a higher rectification ratio is estimated. The rectifying properties of the asymmetrically doped carbon materials are derived from the nonequilibrium Green's function theory. The main reason for the rectification is found to be the interaction of the external electric field induced between the electrodes with the molecular orbitals of the asymmetrically doped hydrocarbons.

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Section: Theoretical Backgroundmentioning

confidence: 99%

Current Rectification in Nitrogen- and Boron-Doped Nanographenes and Cyclophanes

Staykov

Tsuji

et al. 2012

J. Phys. Chem. C

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“…NDR has very important applications in electronic devices including amplier, memory, and fast switch. Possible mechanisms have been proposed theoretically [30][31][32][33][34] and experimentally. 35 However, the mechanism of NDR is still under debate.…”

Section: Resultsmentioning

confidence: 99%

Spin filtering, magnetic and electronic switching behaviors in manganese porphyrin-based spintronic devices

Zeng

Chen

2013

J. Mater. Chem. C

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By using nonequilibrium Green's functions in combination with the density functional theory, we investigate the spin transport properties of manganese porphyrin-based spintronic devices constructed by two manganese porphyrin molecules connected with a p-phenylene-ethynylene group. The interesting spin filtering and magnetoresistance effects can be observed in the device. Particularly, when the overlap of p channels between manganese porphyrin and phenyl ring parts is broken, the spin filtering efficiency and magnetoresistance ratio of the device can be effectively increased. Meanwhile, the transition from a giant magnetoresistance molecular device to a tunnelling magnetoresistance molecular device can also be realized by this simple operation process. Moreover, electrically induced switching behavior based on negative differential resistance effects is also observed in our model. The mechanisms are proposed for these phenomena.

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“…Several propositions have been made so far on CC rec-tification, but too limited works are available on SC rectification which thus certainly demands critical analysis to probe into it further. For purposeful designing of a rectifier we need to focus not only on how to achieve higher rectification ratio [1][2][3][4][5][6][7][8][9][12][13][14][15] , but at the same time emphasis should be given on how its magnitude and direction can be controlled selectively [16][17][18][19] . The present work essentially focuses on all these issues.…”

Section: Introductionmentioning

confidence: 99%

Controlled charge and spin current rectifications in a spin polarized device

Patra

Maiti

2019

Journal of Magnetism and Magnetic Materials

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Rectifying and negative differential resistance behaviors of a functionalized Tour wire: The position effects of functional groups

Cited by 18 publications

References 17 publications

Current Rectification in Nitrogen- and Boron-Doped Nanographenes and Cyclophanes

Current Rectification in Nitrogen- and Boron-Doped Nanographenes and Cyclophanes

Spin filtering, magnetic and electronic switching behaviors in manganese porphyrin-based spintronic devices

Controlled charge and spin current rectifications in a spin polarized device

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