2000
DOI: 10.1063/1.125954
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Rectangular nanovoids in helium-implanted and thermally annealed MgO(100)

Abstract: Cleaved MgO͑100͒ single crystals were implanted with 30 keV 3 He ions with doses varying from 1ϫ10 19 to 1ϫ10 20 m Ϫ2 and subsequently thermally annealed from 100 to 1100°C. Transmission electron microscopy observations revealed the existence of sharply rectangular nanosize voids at a depth slightly shallower than the helium-implantation range. Monitoring of the defect depth profile and the retained amount of helium was performed by positron-beam analysis and neutron depth profiling, respectively.

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Cited by 38 publications
(27 citation statements)
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“…Dislocation loops are formed at smaller depths in the MgO top layer ͑layer 1͒ and below the ion implantation layer. 40 The presence of dislocation loops in MgO does not affect the S parameter significantly, but it does shorten the diffusion length compared to the bulk values. In the layer below the ion implantation layer ͑layer 3͒ there are not only dislocation loops but also a tail of implanted species as observed by NDP, 20 possibly because of channeling effects.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Dislocation loops are formed at smaller depths in the MgO top layer ͑layer 1͒ and below the ion implantation layer. 40 The presence of dislocation loops in MgO does not affect the S parameter significantly, but it does shorten the diffusion length compared to the bulk values. In the layer below the ion implantation layer ͑layer 3͒ there are not only dislocation loops but also a tail of implanted species as observed by NDP, 20 possibly because of channeling effects.…”
Section: Methodsmentioning
confidence: 99%
“…The choice for this model is mainly based on defect analysis performed on previously ion-implanted MgO samples that were analyzed with techniques such as transmission electron microscopy, positron annihilation spectroscopy, and neutron depth profiling. 20,40,41 In particular, there is a subsurface layer containing the ion implanted species and the main implantation defects ͑layer 2͒. Dislocation loops are formed at smaller depths in the MgO top layer ͑layer 1͒ and below the ion implantation layer.…”
Section: Methodsmentioning
confidence: 99%
“…The specimen preparation is dis-cussed elsewhere. 19 The sample treatment and main observations are listed in Table I.…”
Section: Methodsmentioning
confidence: 99%
“…The specimen preparation was discussed elsewhere. 19 In order to facilitate comparison with the formation of Zn-clusters, 15 an additional set of samples was implanted in the same batch with Zn + ions only and annealed simultaneously with the coimplanted samples. Figure 1͑a͒ shows representative positron depth profiles of the Doppler W and S parameters for the Zn and Zn plus O coimplanted samples after the annealing step at 770 K, using momentum windows of 8.…”
mentioning
confidence: 99%
“…The specimen preparation was discussed elsewhere. 19 In order to facilitate comparison with the formation of Zn-clusters, 15 an additional set of samples was implanted in the same batch with Zn + ions only and annealed simultaneously with the coimplanted samples. 10 While W provides a measure for positron annihilation with semicore electrons, 10,17 providing chemical sensitivity to the positron trapping site, S is a measure of annihilation with valence electrons, providing sensitivity to the electronic structure and the presence of vacancies.…”
mentioning
confidence: 99%