Abstract:Cleaved MgO͑100͒ single crystals were implanted with 30 keV 3 He ions with doses varying from 1ϫ10 19 to 1ϫ10 20 m Ϫ2 and subsequently thermally annealed from 100 to 1100°C. Transmission electron microscopy observations revealed the existence of sharply rectangular nanosize voids at a depth slightly shallower than the helium-implantation range. Monitoring of the defect depth profile and the retained amount of helium was performed by positron-beam analysis and neutron depth profiling, respectively.
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