Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies

Alexandrov, Petre; Demakov, K. D.; Shemardov, S. G.; Kuznetsov, Yu. Yu.

doi:10.1134/s1063782613020036

Cited by 4 publications

(2 citation statements)

References 3 publications

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“…It should be noted that presently the time solid state electronic devices are frequently manufactured in homogenous samples (Volovich, 2006; Kerentsev and Lanin, 2008; Ageev et al , 2009; Volokobinskaya et al , 2001; Ong et al , 2006; Lachin and Savelov, 2001; Bagraev et al , 2005) where p - n -junction has less sharpness in comparison to the p - n -junction manufactured in the heterostructures (curves 1 and 2 in Figures 2-5). At the same time, several solid state electronic devices manufacture framework heterostructures (Svintsov et al , 2013; Alexandrov et al , 2013) where the sharpness of p - n -junction could be increased by using the interface between the layers of the heterostructure. At the same time the homogeneity of the dopant concentration increases.…”

Section: Discussionmentioning

confidence: 99%

“…To date, there have been several approaches to decreasing the size of these elements. One approach is the growth of thin film devices (Volovich, 2006; Kerentsev and Lanin, 2008; Ageev et al , 2009; Volokobinskaya et al , 2001; Yu et al , 2014; Cho et al , 2014) another is the diffusion or ion doping of homogenous samples, or heterostructures, and still another is the laser or ion doping of the dopant and/or radiation defects (Ong et al , 2006; Wang et al , 2006; Bykov et al , 2003; Svintsov et al , 2013; Alexandrov et al , 2013; Lukashin et al , 2014). The inhomogeneous distribution of temperature can be obtained in the doped inhomogeneity of the structure while will then lead to a decreasing number of dimensions within the considered devices.…”

Section: Introductionmentioning

confidence: 99%

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An analytical approach for analysis and optimization of formation of field-effect heterotransistors

Pankratov¹,

Bulaeva²

2016

MMMS

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Purpose The purpose of this paper is to analyze and optimize the formation of field-effect heterotransistors using analytical approach. The approach makes it possible to analyze mass and heat transport in a multilayer structure without cross-linking of solutions on interfaces between layers of the multilayer structure. The optimization makes it possible to decrease dimensions of the heterotransistors and to increase speed of transport of charge carriers during functioning of the transistors. Design/methodology/approach The authors introduce an analytical approach for analysis of mass and heat transport, which makes it possible to take into account at one time varying in space and time parameters of the transports (diffusion coefficient, heat conduction coefficient, etc.) and nonlinearity of processes. The approach enables analysis of mass and heat transport in a multilayer structure without cross-linking of solutions on interfaces between layers of the multilayer structure and optimises the technological process. The optimization means it is possible to decrease dimensions of field-effect heterotransistors. Findings In this paper the authors introduce an approach to manufacture a field-effect heterotransistor with inhomogeneous doping of channel. Some recommendations to optimize technological process to manufacture more compact distribution of concentration of dopant have been formulated. Originality/value The results are original and the paper provides an approach to the manufacture of a field-effect heterotransistor.

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