Recovery of cycling-induced degradation of interfacial SiO2 in HfO2-FeFET and its impact on retention characteristics
Viktoria Schlykow,
Kunifumi Suzuki,
Yoko Yoshimura
et al.
Abstract:A detailed understanding of cycling induced degradation of interfacial SiO2 in HfO2-FeFET devices is presented. By direct observation of electron trapping to cycling-generated trap sites in various time domains, we found that trap sites disappear over time. This recovery of the degradation has a non-negligible impact on the retention characteristics after cycling.
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