Record-high saturation current in end-bond contacted monolayer MoS2 transistors

Xiao, Jiankun; Kang, Zhuo; Liu, Baishan; Zhang, Xiankun; Du, Jia; Chen, Kuanglei; Yu, Huihui; Liao, Qingliang; Zhang, Zheng

doi:10.1007/s12274-021-3504-y

Cited by 30 publications

(16 citation statements)

References 54 publications

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“…a) Comparison of R C for CVD and exfoliated monolayer graphene. [ 21,56–58,60,61,63,64,126,205–208 ] b–d) Comparison for 1D and 2D contacts in terms of R C (b), [ 8–12,15–20,26,39,42–44,78,79,81,89,100,102,103,117,119,120,196,198–204 ] I drive as a function of SBH (c), [ 7,8,10,20,44,81,187,198–200,203 ] and R C as a function of SBH (d). [ 8,10,11,17,20,43,44,79,81,89,100,103,120,196,198,200–203 ] …”

Section: Discussionmentioning

confidence: 99%

“…Recently, a high vacuum and slow metal deposition process has been shown to result in a record high saturation density of 730 µA µm −1 and a low R C of 2.5 kΩ µm of CVD grown monolayer MoS 2 devices. [ 78 ] However, despite being compatible with the hBN‐encapsulated structure and leading to a polymer‐free interface, this top‐down approach has been used with limited success for TMD devices until now.…”

Section: Recent Development Of Edge Contact Methodsmentioning

confidence: 99%

“…[21] TMD-based FETs also exhibited high mobility, high current density, and low R C with 1D edge contacts. [39,78,102] Such 2D FETs are expected to facilitate a 3D integration of vertically stacked multifunctional devices such as memory, logic, and sensor devices, with potential for usage in in-memory and in-sensor computing systems. [81] Further, the 1D edge contacts can lead to unique electrical features in FET device structures that have been challenging to achieve using typical top contacts, such as Fermi level depinning, immunity to contact scaling, and in-plane anisotropic transport.…”

Section: Device Applications With Edge Contactsmentioning

confidence: 99%

“…The high surface sensitivity and limited edge dimensions of 2D semiconductors also limit R C in edge-contacted devices due to the formation of oxide/alloy during the etching process. [190] Thus, the highest I drive and the R C of 1D [21,[56][57][58]60,61,63,64,126,[205][206][207][208] b-d) Comparison for 1D and 2D contacts in terms of R C (b), [8][9][10][11][12][15][16][17][18][19][20]26,39,[42][43][44]78,79,81,89,100,102,103,117,119,120,196,[198][199][200][201][202][203][204] I drive as a function of SBH (c), …”

Section: Summary and Issuesmentioning

confidence: 99%

“…Figure 15. a) Comparison of R C for CVD and exfoliated monolayer graphene [21,[56][57][58]60,61,63,64,126,[205][206][207][208]. b-d) Comparison for 1D and 2D contacts in terms of R C (b),[8][9][10][11][12][15][16][17][18][19][20]26,39,[42][43][44]78,79,81,89,100,102,103,117,119,120,196,[198][199][200][201][202][203][204] I drive as a function of SBH (c),[7,8,10,…”

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confidence: 99%

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Recent Progress in 1D Contacts for 2D‐Material‐Based Devices

et al. 2022

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It is therefore becoming increasingly important to analyze the electronic properties of nanometer scale semiconductors from the quantum mechanical perspective. Due to their atomic thickness, 2D materials (2DMs) are considered to be the best candidates for revealing the quantum mechanical properties when used as semiconducting channel materials in electronic devices, thus representing alternatives to the conventional semiconducting materials such as Si and GaAs. [1] However, the use of 2DMs leads to large contact resistance (R C ) when they are in contact with metallic electrodes, since they form a metallic interface that depends on van der Waals (vdW) bonding, which induces the vdW gap and generates metalinduced gap states, ultimately resulting in Fermi-level pinning (FLP). [2,3] As a result, the electronic mobility of the metal-contacted 2DM based devices is found to be much lower than the theoretically expected value, thus preventing their quantum properties from being observed. Therefore, minimizing the R C of the devices using 2DMs represents the most important challenge for exploring the novel quantum electronic properties of the devices. In this regard, there have been substantial efforts to reduce the R C by using novel contact strategies. [4,5] Clean vdW contacts either by transferring metal/ semimetal electrodes or depositing indium on 2D semiconductors have been proposed to obtain high-quality metal-semiconductor (MS) interfaces without generating metallization induced defects. [6][7][8][9][10][11] High density doping achieved by chemical dopants, substitutional doping, solid oxides, and semimetals has also been utilized to reduce the R C significantly. [12][13][14][15][16][17][18][19][20] However, such contacts were typically placed onto the vdW surface of 2D semiconductors resulting in the formation of vdW tunneling barriers as well as the limitation in lateral scaling of the devices. Here, the 1D edge contact methods have been studied intensively as a very suitable technique for achieving a vdW gap-free electrical contact in scaled 2D devices.Edge-contacted 2D devices were first demonstrated for the purpose of suppressing scattering from the surface of 2DMs by encapsulating graphene with 2D hBN. [21] Following this initial report, the 1D edge contact method became more widely employed due to its additional advantages in the operation of 2D devices: the realization of Fermi-level depinning Recent studies have intensively examined 2D materials (2DMs) as promising materials for use in future quantum devices due to their atomic thinness. However, a major limitation occurs when 2DMs are in contact with metals: a van der Waals (vdW) gap is generated at the 2DM-metal interfaces, which induces metal-induced gap states that are responsible for an uncontrollable Schottky barrier (SB), Fermi-level pinning (FLP), and high contact resistance (R C ), thereby substantially lowering the electronic mobility of 2DMbased devices. Here, vdW-gap-free 1D edge contact is reviewed for use in 2D devices with substantially su...

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Section: Discussionmentioning

confidence: 99%

Section: Recent Development Of Edge Contact Methodsmentioning

confidence: 99%

Section: Device Applications With Edge Contactsmentioning

confidence: 99%

Section: Summary and Issuesmentioning

confidence: 99%

mentioning

confidence: 99%

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Recent Progress in 1D Contacts for 2D‐Material‐Based Devices

et al. 2022

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Perspective and Outlook

Zhang

2022

Van Der Waals Heterostructures

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Molecule‐Upgraded van der Waals Contacts for Schottky‐Barrier‐Free Electronics

et al. 2021

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The applications of any ultrathin semiconductor device are inseparable from high‐quality metal–semiconductor contacts with designed Schottky barriers. Building van der Waals (vdWs) contacts of 2D semiconductors represents an advanced strategy of lowering the Schottky barrier height by reducing interface states, but will finally fail at the theoretical minimum barrier due to the inevitable energy difference between the semiconductor electron affinity and the metal work function. Here, an effective molecule optimization strategy is reported to upgrade the general vdWs contacts, achieving near‐zero Schottky barriers and creating high‐performance electronic devices. The molecule treatment can induce the defect healing effect in p‐type semiconductors and further enhance the hole density, leading to an effectively thinned Schottky barrier width and improved carrier interface transmission efficiency. With an ultrathin Schottky barrier width of ≈2.17 nm and outstanding contact resistance of ≈9 kΩ µm in the optimized Au/WSe2 contacts, an ultrahigh field‐effect mobility of ≈148 cm2 V−1 s−1 in chemical vapor deposition grown WSe2 flakes is achieved. Unlike conventional chemical treatments, this molecule upgradation strategy leaves no residue and displays a high‐temperature stability at >200 °C. Furthermore, the Schottky barrier optimization is generalized to other metal–semiconductor contacts, including 1T‐PtSe2/WSe2, 1T′‐MoTe2/WSe2, 2H‐NbS2/WSe2, and Au/PdSe2, defining a simple, universal, and scalable method to minimize contact resistance.

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Record-high saturation current in end-bond contacted monolayer MoS2 transistors

Cited by 30 publications

References 54 publications

Recent Progress in 1D Contacts for 2D‐Material‐Based Devices

Recent Progress in 1D Contacts for 2D‐Material‐Based Devices

Perspective and Outlook

Molecule‐Upgraded van der Waals Contacts for Schottky‐Barrier‐Free Electronics

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